Three-dimensional simulation of facet formation and the coupled heat flow and segregation in Bridgman growth of oxide crystals

Three-dimensional imperfections in a model vertical Bridgman growth system for cadmium zinc telluride

“…While such studies have been conducted before on other systems [14][15][16][17][18][19][20], the results presented here contain several illuminating outcomes.…”

“…Liang and Lan [15,16] presented three-dimensional, steady-state models for vertical Bridgman growth that included a selfconsistent, free-boundary representation of the melt-crystal interface. In a series of recent notable papers, Lan and co-workers [17][18][19][20] have developed and applied three-dimensional models to describe small-scale, vertical Bridgman systems.…”

Computer Modelling of Bulk Crystal Growth

“…One example is the coupling of a mesoscale model of step flow to a macroscale model of transport for solution growth of KTP, discussed in Section 3.6.4. Other examples are the incorporation of facetting by Brandon et al [1,3,4] and Lan and Tu [2] in models of melt crystal growth. Perhaps the most comprehensive model to date is that of Dornberger and Sinno et al [7,8], which couples a state-of-the-art global transport model with a model of point-defect generation and transport for industrial production of bulk silicon by Czochralski growth.…”

“…Brandon et al [1,3,4] use an approach in which Equation (3.15) is solved directly as part of the transport model, with a value of β kin that varies sharply but continuously near to singular orientations of the interface. Lan and Tu [2] use a different approach that is more geometric in nature, in which the locations of facet planes of fixed orientation are iteratively updated until Equation (3.15) is satisfied. These treatments represent a step forward in the use of transport models to predict interface morphology, but come with limitations.…”

“…By far the greatest progress has been made in transport modelling, although advances are being made piecemeal across the spectrum of microscopic phenomena. A few recent studies have partially integrated macroscopic modelling with microscopic phenomena to tackle problems of predicting growth morphology in melt growth [1][2][3][4] and solution growth [5,6], and in predicting point-defect generation and transport [7,8] in silicon growth. In most cases, however, modellers have focused on macroscopic transport, relying on criteria derived from simple theories or experimentally derived heuristics to infer outcomes with regard to crystal structure.…”