Three-dimensional Si islands on Si(001) surfaces

Shklyaev, A. A.

doi:10.1103/physrevb.65.045307

Cited by 55 publications

(36 citation statements)

References 30 publications

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“…Furthermore we can also obtain very strong ferromagnetic RKKY interaction [11]. Experimentally quantum dot arrays with 3-10nm diameter quantum dots have already been fabricated [33,34,35]. We believe that the system we consider can be realized by using such quantum dot arrays with a few nm inter dot distance.…”

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confidence: 87%

Decoherence of localized spins interacting via RKKY interaction

Rikitake

Imamura

2005

Phys. Rev. B

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We theoretically study decoherence of two localized spins interacting via the RKKY interaction in one-, two-, and three-dimensional electron gas. We derive the kinetic equation for the reduced density matrix of the localized spins and show that energy relaxation caused by singlet-triplet transition is suppressed when the RKKY interaction is ferromagnetic. We also estimate the decoherence time of the system consisting of two quantum dots embedded in a two dimensional electron gas.PACS numbers: 03.65. Yz, 75.75.+a, Quantum computation and quantum information are emerging research fields of physics, technology and information sciences [1]. The elementary units in most quantum computation and quantum information schemes are a quantum bit and a quantum gate. Because of its scalability and relatively long coherence time [2], solid state device with localized spins is considered as one of the promising candidates for these quantum devices [3]. Kane[4] proposed the system of nuclear spins of phosphorus donors in a silicon heterostructure with direct exchange interaction between electrons localized at the donors. Mozyrsky et al. [5,6] proposed the qubits of nuclear spins in quantum-Hall system in which the gate operation is realized by the indirect exchange interaction via virtually excited spin waves. Recently Craig et al. [7,8] observed the RKKY [9] coupling of semiconductor quantum dots, which proved that the RKKY interaction can be used as a quantum gate consisting of localized spins in semiconductor quantum dots. Several theoretical papers studying the RKKY interaction in such semiconductor nanostructures have been published [10,11,12,13,14,15].One of the major obstacle to realizing quantum computation is decoherence [16,17]. Since the RKKY interaction is mediated by the electron gas, the particle-hole excitations act as an environment (Fermion bath) [18,19,20,21]. It is therefore important to clarify the effects of the Fermion bath on the dynamics of the qubits consisting of the localized spins.In this paper, we study the dynamics of the localized spins interacting via the RKKY interaction by using the kinetic equation of the reduced density matrix. We find the term intrinsic to the RKKY interaction appears in the kinetic equation, which is an oscillating function of the distance between the localized spins with the same period as the RKKY interaction. We show that the energy relaxation due to the singlet-triplet transition is strongly suppressed by this term. We also discuss the physical realization of a quantum gate using the RKKY interaction and estimate the decoherence time of the system consisting of two quantum dots embedded in a two dimensional electron gas(2DEG).We consider the system consisting of two localized spins embedded in a one-, two-, or three-dimensional electron gas. The Hamiltonian, H = H S + H c + H int , comprises the localized spin part, H S , the conduction electron part, H c , and the s-d interaction, H int . We assume that there is no external magnetic field and we set H S = 0. In the sec...

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confidence: 87%

Decoherence of localized spins interacting via RKKY interaction

Rikitake

Imamura

2005

Phys. Rev. B

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“…Данные моделирования качественно согласуются с экспериментами по формированию 3D−Si−нк на поверхности кремния, покрытого пленкой диоксида кремния [18].…”

Section: результаты моделированияunclassified

“…В таких структурах наблюдали высокую интенсивность люминесценции в видимой и ИК−областях спектра благодаря умень-шению дисперсии в распределении кластеров по размерам. Недавно был предложен новый метод по-лучения Si−нк, обладающих заметной фотолюминес-ценцией, -непосредственное осаждение кремния на слой диоксида кремния [18,19].…”

Section: Introductionunclassified

Monte Carlo Simulation of Silicon Nanocluster Formation in Silicon Dioxide

Karpov¹,

Михантьев²,

Usenkov³

et al. 2015

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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“…To achieve perspective characteristics, different techniques were implemented to create Ge NCs, such as ion beam synthesis, chemical vapor deposition, or molecular beam epitaxy (MBE). The MBE technique of Ge nanocluster growth on Si(100) covered with ultrathin SiO 2 layers is widely used now [4,5]. This technique enables increasing the nanocluster density up to 10 12 -10 13 cm -2 due to thermal decomposition of epitaxial and non-epitaxial Ge nanoclusters with high aspect ratio varying between 0.2 and 0.6.…”

Section: Introductionmentioning

confidence: 99%

Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001)

et al. 2016

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Conductivity, capacitance, and the low-frequency noise in structures with Ge nanoclusters grown on oxidized Si(001) have been investigated for the temperature range of 120-290 K and frequencies from 1 kHz to 1 MHz in co-planar geometry. The Mott's variable range hopping through quasi-band of localized states at the Fermi level of nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasiband width was found to be about 110 meV, while the middle is located at E v ? 140 meV. The maximum of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band. A significant increase of the 1/f noise level with decreasing temperature found for the structures studied was ascribed to accompany hopping transport of charge carriers within the quasi-band with a high density of localized states.

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Three-dimensional Si islands on Si(001) surfaces

Cited by 55 publications

References 30 publications

Decoherence of localized spins interacting via RKKY interaction

Decoherence of localized spins interacting via RKKY interaction

Monte Carlo Simulation of Silicon Nanocluster Formation in Silicon Dioxide

Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001)

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