Three-dimensional process simulation

Lorenz, J.; Baccus, B.; Henke, Wolfgang

doi:10.1016/s0167-9317(96)00011-1

Cited by 10 publications

(1 citation statement)

References 18 publications

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“…This can be seen from the data in table 3, based on experience with technology simulators such as SUPREM4, STORM, IMPACT; in ID and 2D, the figures of merit of the actual simulation techniques are better than, or equivalent to, the ideal values. There is, as yet, no generally available 3D technology simulator, but the several approaches in development (Lorenz 1995) and the increasing demands of technology are likely to provide one in the future. Such a simulator could meet the needs of sensitivity and resolution and, using present workstation capability, would only fail to meet the figure of merit because of speed; the continuing improvements in computing performance will close this gap in time.…”

Section: T H E Shortfall In a N Alytical Ca P A B Ilitymentioning

confidence: 99%

Where analytical techniques fall short: a user´s perspective

Hill

1996

Phil. Trans. R. Soc. Lond. A

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Electronic devices make enormous demands on compositional, structural and elec trical characterization techniques. These demands have catalysed great technique improvements but, despite this, a large and increasing gap exists between demand and supply, especially in the characterization needs of silicon integrated circuits. These needs are outlined, the shortfall in present ID, 2D and 3D analytical capabil ities is quantitatively assessed and a strategy to bridge this gap by combining the best modelling and characterization methods is presented.

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Section: T H E Shortfall In a N Alytical Ca P A B Ilitymentioning

confidence: 99%