2006
DOI: 10.1063/1.2215269
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Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

Abstract: We have measured the evolving three-dimensional ͑3D͒ morphology of patterned SiO 2 stripes on Si substrates induced by 3 MeV O ++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-di… Show more

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Cited by 25 publications
(33 citation statements)
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“…We propose that ion irradiation generates biaxial compressive stress in silicon nitride, as it is known to do in other amorphous materials at higher ion energies. 2,3,[9][10][11][12][13][14][15][16][17][18] An analysis of the resulting mechanics provides good agreement with experimentally measured deflection profiles, as well as an explanation for the qualitatively different shapes observed in low-stress and high-stress silicon nitrides.…”
Section: Introductionsupporting
confidence: 60%
See 1 more Smart Citation
“…We propose that ion irradiation generates biaxial compressive stress in silicon nitride, as it is known to do in other amorphous materials at higher ion energies. 2,3,[9][10][11][12][13][14][15][16][17][18] An analysis of the resulting mechanics provides good agreement with experimentally measured deflection profiles, as well as an explanation for the qualitatively different shapes observed in low-stress and high-stress silicon nitrides.…”
Section: Introductionsupporting
confidence: 60%
“…10 Comprehensive studies in SiO 2 have afforded a reasonably complete picture of the phenomenon. [11][12][13][14][15][16] Electronic energy loss in the ion track creates a thermal spike accompanied by thermal expansion. Shear stresses relax when the innermost region of the ion track exceeds the "flow temperature;" subsequent thermal contraction during rapid quenching locks in an expansion perpendicular to the ion track.…”
Section: A Simple Mechanical Model For the Membrane Deflectionmentioning
confidence: 99%
“…1 B and C), due to buckling of the stiff skin formed on the areas of the PDMS exposed to FIB. FIB exposure creates a tendency for the skin to expand in the direction perpendicular to the direction of FIB irradiation if it was not constrained by the PDMS substrate, similar to the effect observed in exposing metallic surfaces to ion beam irradiation (2)(3)(4). The mismatch strain between the stiff skin and its substrate give rise to skin buckling and the formation of the wrinkle patterns (5)(6)(7)(8)(9).…”
mentioning
confidence: 94%
“…Biaxial compressive stresses are known to develop in the bombarded solid, [46][47][48][49][50][51][52] and this effect could be important in the surface dynamics. Assuming a sinusoidal modulation of a free surface under biaxial compressive stress, the tangential stress increases at the troughs ͑compres-sion͒ and decreases at the peaks ͑dilation͒ by an amount proportional to the wave number of the modulation and to the applied stress 0 in the solid.…”
Section: B Asaro-tiller Mechanismmentioning
confidence: 99%