Three-dimensional line edge roughness in pre- and post-dry etch line and space patterns of block copolymer lithography

Abstract

In this work, we employ large-scale coarse-grained molecular dynamics (CGMD) simulations to study the three-dimensional line edge roughness associated with line and space patterns of chemo-epitaxially directed symmetric block copolymers.

Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers

“…The overall roughness, 3σ, for the PMMA lines as well as the correlation coefficients for the PS and PMMA lines are provided in the Supporting Information (Figures S3 and S4). Our values are similar to those calculated by simulations of an analogous PS- b -PMMA copolymer . Similar to the LPR, the LER of the thick films for both DSA and SRSA is larger than that of the corresponding thin films.…”

“…Our values are similar to those calculated by simulations of an analogous PS-b-PMMA copolymer. 41 Similar to the LPR, the LER of the thick films for both DSA and SRSA is larger than that of the corresponding thin films.…”

General-Purpose Algorithm for Two-Material Minimum Feature Size Enforcement of Freeform Nanophotonic Devices

“…This will attempt to enforce separate constraints for both regions, but will fail in certain circumstances, as shown in Figure 3a. As a correction, the method can be applied repeatedly until the constraints (eq 8) are satisfied: (10) In reality, for many masks this method will never satisfy the constraints, leading to nonconvergence. Instead, the two operators, open and close, will repeatedly undo the changes made by the other, preventing satisfaction of both constraints simultaneously.…”

“…Additionally, other recent work has provided analyses of the effects of specific fabrication defects on device performance. These include using 3D modeling of line-edge roughness, 10 estimating the stochastic behavior of lithographic resists using deep learning, 11 determining the performance consequences of photonic waveguide couplers under common fabrication defects 12 and detecting fill MFS violations via an analysis of freeform vector graphic masks. 13 These can be used a posteriori to analyze chosen designs or during an optimization process itself as a way of filtering out sensitive designs and MFS violations.…”

Solvent-assisted self-assembly of block copolymer thin films

“…In such instances, direct defect counting methods or critical dimension analysis, e.g., line edge roughness quantification are used to assess BCP pattern quality. 270,286,287 Such well-ordered BCP templates may still possess a small number of intrinsic defects, prohibitive to certain cutting-edge BCP applications such as IC patterning. A review article on the relevance of defect in BCP selfassembly has been published by Li and Muller.…”