Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics

Abstract

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

Toward High‐Performance Photodetectors Based on 2D Materials: Strategy on Methods

“…In addition, due to its unique electrical properties and 2D nature, a graphene contact is also a model to be considerable, as we mentioned relating to graphene sandwiched photodetectors. Second, the integration of different types of methods may offer a platform to enhance the performance, such as the integration approach combining a silicon waveguide and metallic nanoplasmonic structures in BP photodetectors, which has been reported very recently . Third, novel 2D materials with very high mobility and environmental stability should be synthesized and utilized in devices to meet specific requirements.…”

Optical and Optoelectronic Properties of Black Phosphorus and Recent Photonic and Optoelectronic Applications

“…By integrating BP photodetectors with silicon waveguide (Si‐waveguide), the light–matter interaction can be enhanced through the optical confinement in the waveguide and grating structure to overcome the limitation of weak absorption at the cutoff wavelength, thus extending the strong photoresponse to the SWIR and MIR regions . Youngblood et al first reported a Si‐waveguide‐integrated multilayer BP phototransistor with an intrinsic photoresponsivity of ≈135 mA W −1 and high response bandwidth exceeding 3 GHz at 1.55 µm ( Figure a), corresponding to the most useful band in telecommunications.…”

“…To exploit the plasmonic nanostructure that can confine the optical field to subdiffraction‐limited dimensions and drastically enhance the light–BP interaction over a broadband wavelength range, Chen et al built an on‐chip BP photodetector integrated on the Si‐waveguide covered by a plasmonic layer. This hybrid architecture combines the advantages of the low propagation loss of Si‐waveguide and the high‐field confinement of the plasmonic nanogap, affording an intrinsic responsivity of 10 A W −1 and a 3 dB cutoff frequency of 150 MHz at 1.55 µm (Figure b) . Apart from these photodetectors operating in the telecommunication wavelength, Huang et al first reported the waveguide‐integrated BP photodetector for room‐temperature photodetection at MIR region ranging from 3.68 to 4.03 µm, corresponding to the cutoff wavelength of thick BP with a bandgap of ≈0.3 eV.…”

“…(Inset) Schematic of the integrated hybrid device with labels for different layers. Reproduced with permission . Copyright 2017, American Chemical Society.…”

Hybrid dielectric waveguide spectroscopy of individual plasmonic nanoparticles

“…A lot of attention has been devoted in recent years to on-chip hybrid devices where plasmonic nanoantennas have been integrated with standard silicon nitride Si 3 N 4 photonic waveguides. [12][13][14][15][16][17][18][19][20] The transparency of silicon nitride extends towards the visible, thus making it an ideal platform for observing plasmon spectroscopy in the visible and near IR, i.e. the spectral range of interest for plasmonic nanostructures.…”