Three-color broadband asymmetric quantum well infrared photodetectors in long wavelength infrared range (LWIR)

Hoştut, Mustafa; Alyörük, M.; Ergün, Y.; Sökmen, I.

doi:10.1007/s00339-009-5415-8

Cited by 11 publications

(2 citation statements)

References 13 publications

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“…Infrared photodetection has been widely used in both military and civilian purposes, including biomedicine, surveillance, communication and astronomy. Current detection technologies are mainly based on excellent optoelectronic absorbers such as indium gallium arsenide (InGaAs) in near infrared (NIR) 1 , mercury cadmium telluride (MCT) in middle infrared (MIR) [2][3] , and MCT and quantum well infrared (QWIP) structures in long infrared (LIR) ranges 4 . The photodetection relying on the absorption by sensitive optoelectronic materials has been inherently limited by the absorption law exp (-αd) 5 , where α is the absorption coefficient and d is thickness of the absorption layers.…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced infrared photodetection

Tong

Suo

et al. 2019

Opto-Electronic Advances

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Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.

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Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced infrared photodetection

Tong

Suo

et al. 2019

Opto-Electronic Advances

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“…Current detection technologies are mainly based on excellent optoelectronic absorbers such as InGaAs in NIR [127], MCT in MIR [128], [129], and QWIP structures in LIR ranges [130]. The photodetection relying on the absorption by sensitive optoelectronic materials has been inherently limited by the absorption law exp(-αd) [1], where α is the absorption coefficient and d is thickness of the absorption layers.…”

Section: Chapter 5 Plasmonic Structures For Enhancement Of Mir Photod...mentioning

confidence: 99%

Photonic structure enhancement on photodetection

Suo¹

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Professor Zhang Dao Hua, for his selfless help, full trust and careful guidance. Without Prof.Zhang's support and encouragement, I cannot overcome the difficulties on my way to a PhD. I am deeply impressed by Prof. Zhang's serious scientific attitude, high sense of responsibility, the earnest and diligent spirit, and his magnetic personality charm. It is a great honor to be Prof.Zhang's student, he sets a good example for me, leading me in the right path of becoming a good researcher. During my PhD program, he always patiently listened to my confusion, kindly helped me and provided motivational words when needed. To me, Prof. Zhang is more than a good teacher, he is also my life guide. I would like to take this opportunity to genuinely express my heartfelt thanks and highest respect to Prof. Zhang.

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Colloidal Quantum Dots‐Based Three‐Band Infrared Photodetector with the Bias‐Tunable Spectral Response

Zhao

Wen

et al. 2023

Physica Rapid Research Ltrs

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Multiband infrared photodetectors (PDs) have garnered considerable attention due to their potential in various fields such as biomedical applications, optical communications, and military operations. However, the lattice mismatch of mature bulk semiconductors with varying bandgaps in the same PD pixel has impeded the advancement of multiband infrared detectors. Colloidal quantum dots (CQDs), with adjustable bandgaps, wide spectral range, and easy solution processing are promising materials for the fabrication of multiband infrared detectors. Herein, HgTe CQDs are used with varying bandgaps to construct a three‐band infrared detector with short‐wave infrared of 1.7 and 2.4 μm and midwave infrared of 4 μm. The utilization of Ag2Te nanocrystals to bring in spatially stable doping is the key to achieving three‐band infrared detectors. Through adjusting bias polarity, the detectors switch between a three‐band mode and a dual‐band mode. The detector exhibits exceptional detection performance, with detectivity above 3 × 1010 Jones in three‐band mode.

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Three-color broadband asymmetric quantum well infrared photodetectors in long wavelength infrared range (LWIR)

Cited by 11 publications

References 13 publications

Surface plasmon enhanced infrared photodetection

Surface plasmon enhanced infrared photodetection

Photonic structure enhancement on photodetection

Colloidal Quantum Dots‐Based Three‐Band Infrared Photodetector with the Bias‐Tunable Spectral Response

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