Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene

Abstract

The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

Stabilizing a graphene platform toward discrete components

“…The science of graphene has been maturing for more than a decade now [1], with the community keeping a constant eye on potential applications of this material [2]. In particular applications in micro-electronics [3] [4], in flexible electronics [5] [6], and in optoelectronics [7] [8] [9] have been widely discussed due to graphene's unique and attractive properties. Obviously still, the adoption of graphene at industrial scales will necessarily require numerous further challenges to be overcome.…”

“…We note that these devices are characterized by very low E min values (<E2). Very interestingly, this should allow a significant fabrication yield for devices operating at charge neutrality point (such as optoelectronics devices [9]) with even a very low power supply. Gate field hysteresis statistics on devices satisfying E min < E1, with the protection process and the protection/passivation process.…”

Building blocks and concepts for THz remote sensing and communications

“…Potential use of plasma waves [5,6] will be also presented which can be exploited for the realization of an efficient mixer operating at sub-millimeter wavelengths, either in semiconductor compounds or in graphene (Fig. 5).…”

Large‐Scale‐Compatible Stabilization of a 2D Semiconductor Platform toward Discrete Components

“…Since the discovery of graphene in 2004, [ 1 ] 2D materials have raised a huge interest in many fields as electronics, [ 2–6 ] spintronics, [ 7,8 ] optoelectronics, [ 9–11 ] radiofrequencies, [ 12–14 ] and so on. It was highlighted that integrating those materials into radiofrequencies (RF) applications would allow significant size‐weight‐power‐and‐cost (SWAP‐C) reduction.…”