Third Side of the Lampert Triangle: Evidence of Traps-Filled-Limit Single-Carrier Injection

Henderson, H. Thurman; Ashley, K. L.; Shen, Michael K. L.

doi:10.1103/physrevb.6.4079

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…This result is consistent with data reported by other researchers. 15,37,38 In addition, as can be noticed in Fig. 2, the increase in temperature reduces the slope of the TFL region (a TFL ) and this agrees with the Lampert's model, 26…”

Section: Resultssupporting

confidence: 85%

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Hejazi

Safari

2011

Journal of Applied Physics

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This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert’s triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child’s trap-free square law suggesting the space charge limited current was the dominant mechanism.

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Section: Resultssupporting

confidence: 85%

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Hejazi

Safari

2011

Journal of Applied Physics

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“…Moreover it represents a straightforward tool to prove the consistency of the experi- mental results with the simple Mott-Gurney discrete trap SCLC model and to exclude any misinterpretation of the data, such as assigning the square-law dependence to a discrete trap level instead of a monotonously increasing slope, 10 followed by double injection effects. 9,23,24 In the framework of the SCLC analysis, using the zerotemperature statistic, it is possible to estimate the parameters of an arbitrary distribution of traps, knowing the function describing the distribution h͑E F ͒…”

Section: Space-charge-limited Current Differential Method: the Dismentioning

confidence: 99%

Bulk electrical properties of rubrene single crystals: Measurements and analysis

et al. 2008

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Rubrene single crystals with well-developed ͑100͒ faces extending along the ͓010͔ direction were equipped with two planar gold electrodes deposited under low thermal load on the same crystal surface. The currentvoltage curves measured on crystals with various thicknesses were analyzed by means of the space-chargelimited current model. In all cases, the curves present a clear trap-filled transition that allows extracting the trap-free mobility along the b axis. Working in a gap-type geometry and by comparing the mobility calculated from the Geurst two-dimensional and Mott-Gurney three-dimensional models, a clear 2D to 3D transition is established for a thickness that roughly corresponds to half the distance between the two electrodes. Further quantitative analysis of the data with a differential method leads to the conclusion that charge-transport properties at room temperature are affected by a discrete trap level pointing at 0.48Ϯ 0.02 eV above the valence band.

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“…where N T is the density of traps, L is the width of insulation layer, and e is the dielectric constant of diamond [10]. In fact, N T estimated from Eq.…”

Section: Resultsmentioning

confidence: 99%

Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

Teraji

Koizumi

Koide

et al. 2008

Applied Surface Science

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Third Side of the Lampert Triangle: Evidence of Traps-Filled-Limit Single-Carrier Injection

Cited by 7 publications

References 9 publications

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Bulk electrical properties of rubrene single crystals: Measurements and analysis

Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

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