Third-order nonlinearity compensation in field effect transistors

Khan, Bilal; Simin, Grigory

doi:10.1049/el.2011.2839

Cited by 2 publications

(4 citation statements)

References 5 publications

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“…Therefore, with proper design, contact and channel linearity may compensate for each other resulting in much lower level of third-order distortions. The hybrid resistor-diode-transistor model built to validate this concept demonstrated the third intermodulation power reduction by more than 30 dB [24]. In this demonstration, the nonlinear ohmic contact was modeled as a diode-resistor combination [23,24] (figure 9).…”

Section: Hfet Rf Switch High Power High-linearity and High/low Temper...mentioning

confidence: 98%

“…The hybrid resistor-diode-transistor model built to validate this concept demonstrated the third intermodulation power reduction by more than 30 dB [24]. In this demonstration, the nonlinear ohmic contact was modeled as a diode-resistor combination [23,24] (figure 9).…”

Section: Hfet Rf Switch High Power High-linearity and High/low Temper...mentioning

confidence: 98%

“…In relatively shortchannel devices used for RF switching, with the sourcedrain distance less than 5 μm, the contact resistance may constitute 25-50% of the total device resistance. As shown in [23,24], under typical switching RF drive conditions the contact and channel nonlinearity coefficients for GaN HFETs have opposite signs. Therefore, with proper design, contact and channel linearity may compensate for each other resulting in much lower level of third-order distortions.…”

Section: Hfet Rf Switch High Power High-linearity and High/low Temper...mentioning

confidence: 99%

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III-nitride microwave control devices and ICs

Simin¹,

Jahan²,

Yang³

et al. 2013

Semicond. Sci. Technol.

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The growing complexity and functionality of modern microwave systems put increasing demands on the performance and reliability of RF control devices. Low channel sheet resistance in the on-state and small leakage currents in the off-state, extremely high breakdown voltages, chemical inertness and planar structure make III-nitride heterostructure-based devices uniquely suitable for the next-generation switching devices. The AlInN-based devices and devices using low-conducting layers for controlling surface field and surface charges are expected to further boost the performance. This paper presents a review of III-nitride control devices based on heterostructure field-effect transistors (HFETs), insulated gate HFETs (MISHFETs) and novel capacitively coupled contact and frequency configurable electronics technologies.

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Section: Hfet Rf Switch High Power High-linearity and High/low Temper...mentioning

confidence: 98%

Section: Hfet Rf Switch High Power High-linearity and High/low Temper...mentioning

confidence: 98%

Section: Hfet Rf Switch High Power High-linearity and High/low Temper...mentioning

confidence: 99%

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III-nitride microwave control devices and ICs

Simin¹,

Jahan²,

Yang³

et al. 2013

Semicond. Sci. Technol.

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show abstract

“…Device protection is one of the reasons for using matching networks. [25] Figure 4. Schematic diagram of a receiver in a CPT system using the Class-E amplifier method…”

Section: Figure 2 Cpt System Using Class-e Accessmentioning

confidence: 99%

Design of Capacitive Power Transfer System with Small Coupling Capacitance for Wireless Power Transfer

Wang,

Wan,

Hua

et al. 2024

EAI Endorsed Trans Energy Web

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Wireless power transfer systems play an important role in the application of modern power supply technology. Wireless charging has been widely used in portable devices such as smartphones, laptops, and even some medical devices. Higher system efficiency can be achieved while reducing costs. This article describes the design of a capacitive power transfer (CPT) system using the Class-E amplifier method. When the capacitance of the coupling plate is small, the operation of Class-E amplifiers under Zero-Voltage-Switching (ZVS) conditions is very sensitive to their circuit parameters. By adding an additional capacitor to the Class-E amplifier, the coupling capacitance can be increased, resulting in better circuit performance. The high efficiency of the Class-E amplifier is verified by simulation and experimental results.

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Third-order nonlinearity compensation in field effect transistors

Cited by 2 publications

References 5 publications

III-nitride microwave control devices and ICs

III-nitride microwave control devices and ICs

Design of Capacitive Power Transfer System with Small Coupling Capacitance for Wireless Power Transfer

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