Tl2Ba2CaCu2Ox
(Tl-2212) thin films with enhanced transport critical current densities
Jc
were fabricated by using conventional dc sputtering and a post-annealing process. In
order to employ artificial defects to improve the flux pinning strength, nano-sized
CeO2 dots were
deposited on the LaAlO3(001)
substrates by radiofrequency (rf) magnetron sputtering from a cerium metal
target prior to the growth of Tl-2212 films. The critical current density
Jc
(77 K) of the Tl-2212 thin film on the nanodot-introduced substrate reaches
6 × 106 A cm − 2
at self-field, which is 1.7 times larger than that on the normal substrate. The enhancement of the
Jc
in Tl-2212 film grown on the substrate with artificial defects is
more obvious in magnetic fields. At 0.5 T dc magnetic field, a
Jc (77 K)
of 3.5 × 104 A cm − 2
is observed, which is about 13 times larger than that on the normal substrate.