Third harmonic generation on silicon surface induced by femtosecond laser

Lin, X. Y.; Li, Xiaohong; Zhang, Yanbin; Hou, Yuxiao; Liu, Xueying; Deng, Chengfu; Zhou, Qiang

doi:10.1016/j.optlastec.2018.10.002

Cited by 7 publications

(3 citation statements)

References 32 publications

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“…represents the relation of probability absorption coefficient with photon wavelength in SPA and TPA. The single atom absorption coefficient drops rapidly within the range (300-600) nm assigning the minimum at about 450 nm (Lin et al, 2019) which represents the cut-off wavelength (λcutoff) measured theoretical. On the other hand, with TPA's cut off wavelength is around 550 nm.…”

Section: Sic Propertıes: Single Photon and Two Photon Absorptionmentioning

confidence: 80%

Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

ALP

2023

International Journal of Pure and Applied Sciences

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This paper describes a methodology for studying the energy spectrum and characteristics of Silicon Carbide (SiC) semiconductor materials, utilizing various harmonics for two-photon absorption (TPA). The approach involves developing theoretical models to simulate the energy levels and transitions of SiC, based on the TPA process. By analyzing the resulting spectra obtained by varying the harmonic order, the energy spectrum, and properties of SiC are explored. In this work also includes a comparison of the energy spectrum and properties of SiC for single and two-photon absorption, providing insights into the distinctive features of SiC under these conditions. In particularly absorption co-efficient of the material was calculated from optical transmittance and reflectance measurements at room temperature (300 K) in the wavelength range of 200 -900 nm. In addition, Gaussian functions centered at different energies were modeled using TPA in SiC materials and their contribution to the Harmonic Generation (HG) signal was calculated.

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Section: Sic Propertıes: Single Photon and Two Photon Absorptionmentioning

confidence: 80%

Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

ALP

2023

International Journal of Pure and Applied Sciences

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“…This would eventually lead to an observed saturation in the THG output as the coupled laser power is increased. TPA induced reduction of THG efficiency has been noted before from single-crystal Si . To illustrate the magnitude of this additional loss within the device, the simulated fundamental output power is plotted in Figure d as a function of the fundamental power experimentally coupled to the waveguide for three cases: (1) no nonlinearity is included and the loss is purely linear, (2) with the inclusion of nonlinear loss, and (3) with the inclusion of nonlinear loss and the additional 2.2× roughness induced electric field enhancement.…”

mentioning

confidence: 85%

“…TPA induced reduction of THG efficiency has been noted before from single-crystal Si. 35 To illustrate the magnitude of this additional loss within the device, the simulated fundamental output power is plotted in Figure 5d as a function of the fundamental power experimentally coupled to the waveguide for three cases: (1) no nonlinearity is included and the loss is purely linear, (2) with the inclusion of nonlinear loss, and (3) with the inclusion of nonlinear loss and the additional 2.2× roughness induced electric field enhancement. With only linear losses considered, the output power increases linearly with the input power, while the introduction of the nonlinearity causes a decrease in the output power of 21.3% at P ave,coupled ω = 840 μW.…”

mentioning

confidence: 99%

Enhanced Green Light Emission from a Silicon-Based Metal-Encapsulated Nanoplasmonic Waveguide

Firby,

Elezzabi

2024

Nano Lett.

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Integrated silicon plasmonic circuitry is becoming integral for communications and data processing. One key challenge in implementing such optical networks is the realization of optical sources on silicon platforms, due to silicon’s indirect bandgap. Here, we present a silicon-based metal-encapsulated nanoplasmonic waveguide geometry that can mitigate this issue and efficiently generate light via third-harmonic generation (THG). Our waveguides are ideal for such applications, having strong power confinement and field enhancement, and an effective use of the nonlinear core area. This unique device was fabricated, and experimental results show efficient THG conversion efficiencies of η = 4.9 × 10–4, within a core footprint of only 0.24 μm2. Notably, this is the highest absolute silicon-based THG conversion efficiency presented to date. Furthermore, the nonlinear emission is not constrained by phase matching. These waveguides are envisioned to have crucial applications in signal generation within integrated nanoplasmonic circuits.

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Electron impact single ionization for Si atom

Jonauskas

2020

Atomic Data and Nuclear Data Tables

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Third harmonic generation on silicon surface induced by femtosecond laser

Cited by 7 publications

References 32 publications

Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

Enhanced Green Light Emission from a Silicon-Based Metal-Encapsulated Nanoplasmonic Waveguide

Electron impact single ionization for Si atom

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