Thiophene Deposition on Paper Surface by Pulsed RF-Plasma

Şahin, Halil Turgut

doi:10.1080/02773813.2014.981279

Cited by 2 publications

(2 citation statements)

References 22 publications

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“…36,37 The signal of SAM2 in Figure 2b can be classified into three peaks at 287.1, 286.1, and 284.8 eV, which were identified as C−O, C−S, and C−C/C�C, respectively. 38 The XPS results indicate that the two SAMs were successfully attached to the SiO 2 /Si substrate. The photoluminescence (PL) peak located at ∼790 nm for ML MoSe 2 can be seen in Figure 2c,d, which is consistent with the direct bandgap property of the monolayer.…”

Section: ■ Results and Discussionmentioning

confidence: 93%

“…Figure a,b show the high-resolution C 1s spectra of SAM1 and SAM2. SAM1 in Figure a has two peaks at binding energies 287.2 and 284.8 eV, attributed to C–O and C–C, respectively. , The signal of SAM2 in Figure b can be classified into three peaks at 287.1, 286.1, and 284.8 eV, which were identified as C–O, C–S, and C–C/CC, respectively . The XPS results indicate that the two SAMs were successfully attached to the SiO 2 /Si substrate.…”

Section: Resultsmentioning

confidence: 93%

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Enhance Carrier Diffusion of Monolayer MoSe₂ by Interface Engineering

Zhao,

He,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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Two-dimensional materials hold great potentials for beyond-CMOS (complementary metal−oxide−semiconductor) electronical and optoelectrical applications, and the development of field effect transistors (FET) with excellent performance using such materials is of particular interest. How to improve the performance of devices thus becomes an urgent issue. The performance of FETs depends greatly on the intrinsic electrical properties of the channel materials, meanwhile the device interface quality, such as extrinsic scattering of charged impurities, charge traps, and substrate surface roughness have a great influence on the performance. In this paper, the impact of the interface quality on the carrier diffusion behaviors of monolayer (ML) MoSe 2 has been investigated by using an in situ ultrafast laser technique to avoid the surface contamination during device fabrication process. Two types of selfassembled monolayers (SAMs) are introduced to modify the gate dielectric surface through an interface engineering approach to obtain chemical−stable interfaces. The results showed that the transport properties of ML MoSe 2 were enhanced after interface engineering, for example, the carrier mobility of ML MoSe 2 was improved from ∼59.4 to ∼166.5 cm 2 V −1 s −1 after the SAM modification. Meanwhile, the photocarrier dynamics of ML MoSe 2 before and after interfacial engineering were also carefully studied. Our studies provide a feasible method for improving the carrier diffusion behaviors of such materials, and making them suited for application in future integrated circuit.

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Section: ■ Results and Discussionmentioning

confidence: 93%