Thinned Backside Illuminated CCDs For Ultraviolet Imaging

Tassin, C.; Thenoz, Y.; Chabbal, Jean

doi:10.1117/12.946905

Cited by 5 publications

(6 citation statements)

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“…To maximize the PDE of deep UV photons, the energy band profile must be engineered to prevent photoelectrons from getting trapped and from recombining at the surface without reaching the multiplication region. Band profile re-engineering for UV sensitivity is a well-known process for BSI CCDs [ 106 , 112 , 113 ]. At the beginning of the 90s, the Jet Propulsion Laboratory (JPL) pioneered the delta-doping technique, a method using low temperature molecular beam epitaxy (MBE) on BSI CCDs to improve their quantum efficiency [ 114 , 115 , 116 ].…”

Section: Perspective Of 3d Pdc For Radiation Instrumentationmentioning

confidence: 99%

“…This configuration requires a bonding process to electrically connect each SPADs to the CMOS [91,94,105]. The sensor layer must be thinned down (tens of microns or lower) to detect photons from the visible range, similar to a BSI CCD [106,107]. In the BSI scheme, the absorption/drift region is distinct from the multiplication/avala nche region.…”

Section: Spad Arraymentioning

confidence: 99%

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3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

Pratte

Nolet

Parent

et al. 2021

Sensors

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Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current SiPMs are capable of, for example timing resolution for time-of-flight positron emission tomography and time-of-flight computed tomography, and mitigation of the large output capacitance of SiPM array for large-scale time projection chambers for liquid argon and liquid xenon experiments. In this contribution, the case will be made that 3D photon-to-digital converters, also known as 3D digital SiPMs, have a potentially superior performance over analog and 2D digital SiPMs. A review of 3D photon-to-digital converters is presented along with various applications where they can make a difference, such as time-of-flight medical imaging systems and low-background experiments in noble liquids. Finally, a review of the key design choices that must be made to obtain an optimized 3D photon-to-digital converter for radiation instrumentation, more specifically the single-photon avalanche diode array, the CMOS technology, the quenching circuit, the time-to-digital converter, the digital signal processing and the system level integration, are discussed in detail.

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Section: Perspective Of 3d Pdc For Radiation Instrumentationmentioning

confidence: 99%

Section: Spad Arraymentioning

confidence: 99%

3D Photon-To-Digital Converter for Radiation Instrumentation: Motivation and Future Works

Pratte

Nolet

Parent

et al. 2021

Sensors

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“…This section deals with one possible way to create these fields. Several techniques [4,5,6] have been demonstrated that can be used to generate the necessary fields and control their range of influence. These techniques include selective thinning, flash gates and ion implantation.…”

Section: Ccd Backside Pinning Designmentioning

confidence: 99%

“…For backside enhancement through ion implantation an anneal step is essential. Typically, for thinned back illuminated CCDs, due to the low temperature constraint imposed by having a finished device, this entails laser annealing with either CO2 [5],Ar [6], or KrF excimer laser. By removing the "excess" implanted region of the CCD, the effectiveness of the laser anneal is increased especially for the 248 nm excimer since it absorption length is of the order of 100 A.…”

Section: Ccd Backside Pinning Designmentioning

confidence: 99%

CCD modeling and design for enhanced-UV response

America¹,

Noll²,

Garcia³

et al. 1992

Surveillance Technologies II

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“…Differences in contact and detector processing techniques will affect the nature and number of surface traps and thus will affect the ICC layer thickness. For example, Si(Li) detectors with Pd surface barrier contacts have thinner ICC layers compared to those with Au contacts [7]; very thin ICC layers have been reported in Ge detectors with low energy implanted contacts [10]; and variations in the annealing treatment of B-implanted contacts in Si have been shown to affect the thickness of the ICC layer [11]. The amount of charge lost via surface trapping and recombination is also determined by the numter of minority charge carriers which can reach the surface through diffusion against the electric field; this is a direct function of the carrier mobility [12].…”

Section: Escape Peak Intensitymentioning

confidence: 99%