2012
DOI: 10.1016/j.jpowsour.2012.07.034
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Thin ZnO nanocrystalline films for efficient quasi-solid state electrolyte quantum dot sensitized solar cells

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Cited by 32 publications
(14 citation statements)
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“…The photoactive sensitizers of these solar cells are composed of cadmium sulfide (CdS), [19][20][21][22][23][24][25] cadmium selenide (CdSe), [26][27][28][29][30][31][32][33] cadmium telluride (CdTe) [34][35][36][37][38] and their alloy nanocrystals. [39][40][41][42][43][44][45][46] CdS has an optical band gap of 2.25 eV, and thus it can only absorb light up to B550 nm; CdSe, with a band gap of 1.7 eV, can absorb light below B720 nm; CdTe has an energy gap of 1.45 eV and an optical absorption edge at B860 nm. The CB edges of CdSe and some CdTe nanocrystals were located below that of the TiO 2 film (Figure 2), which resulted in poor and limited electron Figure 1 Energy levels vs vacuum of various (a) metal-chalcogenide quantum dots (QDs) and (b) organometal-halide perovskites as prospective light absorbers for hybrid mesoscopic solar cells.…”
Section: Cadmium Chalcogenide Qdscsmentioning
confidence: 99%
“…The photoactive sensitizers of these solar cells are composed of cadmium sulfide (CdS), [19][20][21][22][23][24][25] cadmium selenide (CdSe), [26][27][28][29][30][31][32][33] cadmium telluride (CdTe) [34][35][36][37][38] and their alloy nanocrystals. [39][40][41][42][43][44][45][46] CdS has an optical band gap of 2.25 eV, and thus it can only absorb light up to B550 nm; CdSe, with a band gap of 1.7 eV, can absorb light below B720 nm; CdTe has an energy gap of 1.45 eV and an optical absorption edge at B860 nm. The CB edges of CdSe and some CdTe nanocrystals were located below that of the TiO 2 film (Figure 2), which resulted in poor and limited electron Figure 1 Energy levels vs vacuum of various (a) metal-chalcogenide quantum dots (QDs) and (b) organometal-halide perovskites as prospective light absorbers for hybrid mesoscopic solar cells.…”
Section: Cadmium Chalcogenide Qdscsmentioning
confidence: 99%
“…In our previous works, double-layered ZCH nanosheets, Zn 5 (OH) 8 [24][25][26][27][28][29][30][31]. All the previously prepared ZnO present good morphology, but after annealing, they exhibited weak pore dispersity, which may limit their application.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO is a very important semiconductor with a wide direct band gap of 3.37 eV and a large exciton binding energy of 60 meV [1], which have been widely applied in light emitting diodes (LED) [2], sensors [3,4], dye-sensitized solar cells (DSSCs) [5,6,7] and quantum dots-sensitized solar cells (QDSCs) [8]. It is well known that the device performance is not only determined by the intrinsic factors, but also by the extrinsic factors, such as the microstructure.…”
Section: Introductionmentioning
confidence: 99%
“…Generally, it contained counter electrode 1 , redox electrolyte and dye-modified wide band semiconductor electrode such as zinc oxide 2 nanostructure. ZnO films have been prepared by several deposition techniques including hydrothermal technique [3][4][5][6] , chemical bath deposition [7][8][9] , sol gel technique 10 , spin coating 11 , pulsed laser deposition 12 , spray pyrolysis [13][14][15][16] , thermal evaporation 17 , dip-coating method 18,19 and radio frequency magnetron sputtering 20 as reported in many literature reviews. Dye sensitized solar cell has many benefits such as low production cost 21,22 , simple manufacturing process, flexibility 23 and high conversion efficiency 24 .…”
Section: Introductionmentioning
confidence: 99%