Thin Tin and Tio2 Film Deposition in Glass Samples by Cathodic Cage

Influence of the plasma nitriding conditions on the chemical and morphological characteristics of TiN coatings deposited on silicon

“…The plasma was applied on the cathodic cage, which played the role of the cathode, and the chamber wall was the anode, while the substrates were kept in a floating potential. Schematic models of the reactor are shown in Souza et al 8,9 Two gas mixtures were used as nitriding atmospheres: (a) 6 sccm N 2 and 18 sccm H 2 (25% N 2 -75% H 2 ) and (b) 18 sccm N 2 and 6 sccm H 2 (75% N 2 -25% H 2 ); two temperatures were applied to the substrates: 300 and 350 °C; three treatment times were used for each temperature: 1, 2, and 4 h; and the pressure was 150 Pa. Table 1 summarizes the plasma nitriding conditions used for producing the 12 samples; A refers to the 25% N 2 -75% H 2 plasma atmosphere, and B to the 75% N 2 -25% H 2 plasma atmosphere. Raman spectroscopy was performed using a monograting Bruker Senterra spectrometer equipped with a charge-coupled device (CCD) detection system and a 785 nm Perkin-Elmer solid state laser that yielded a power of 10 mW on the surface and a resolution of 3 cm…”

“…The cathodic cage plasma deposition (CCPD) was developed by Alves et al 1 and has been employed for depositing a variety of coatings on different substrates [1][2][3][4][5][6][7][8][9] . In the CCPD process, the samples are inserted on an alumina insulator disk that is located inside a cage with uniformly distributed round holes of fixed diameter, so that the plasma acts on the cage and not on the sample surface, avoiding possible defects that are commonly formed during conventional plasma deposition [1][2][3][4][5][6][7][8][9] .…”

“…In the CCPD process, the samples are inserted on an alumina insulator disk that is located inside a cage with uniformly distributed round holes of fixed diameter, so that the plasma acts on the cage and not on the sample surface, avoiding possible defects that are commonly formed during conventional plasma deposition [1][2][3][4][5][6][7][8][9] . The CCPD technique has been used for treating not only metallic materials but also electrical insulator materials [1][2][3][4] , and it produces coatings that have high uniformity.…”

“…This technique allows for good control of roughness and crystallinity, and possesses versatility, simplicity, and low cost 8 . Sousa et al 8,9 have recently shown that this low-cost CCPD method can be effectively used for producing high quality TiN and TiO 2 thin films. The two stoichiometric phases found in the Ti-N phase diagram are δ-TiN (face centered cubic structure) and ε-Ti 2 N (tetragonal structure) phases 10,11 .…”

Nanostructured titanium dioxide average size from alternative analysis of Scherrer's Equation

“…The TiO 2 polymorph has three phases: anatase, rutile and bruquita [21][22][23], and its own intrinsic properties leading to different technological applications in the form of nanoparticles, such as in dye-sensitized solar cells [24][25][26][27], lubricant [28], deionization [29], opto-mechanical composite [30] and others. In this experimental work was observed only the anatase-TiO 2 (a-TiO 2 ) and rutile-TiO 2 (r-TiO 2 ) phases (Figure 1).…”