Thin thermal SiO2 after NH3 or N2O plasma action under plasma-enhanced chemical vapor deposition conditions

Dimitrova, T.; Atanassova, E.; Beshkov, G.; Pazov, J

doi:10.1016/0040-6090(94)90779-x

Cited by 9 publications

(8 citation statements)

References 34 publications

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“…Radio-frequency (rf) discharges in ammonia are used to harden machine tools by nitriding [1] and to create protective coatings. Discharges in NH 3 are used for modifying the surface of SiO 2 films [2]. Mixtures of NH 3 with CO (or CO 2 ) are used to etch magnetic materials [3].…”

Section: Introductionmentioning

confidence: 99%

Electron drift velocity in NH₃in strong electric fields determined from rf breakdown curves

Lisovskiy¹,

Martins²,

Landry³

et al. 2005

J. Phys. D: Appl. Phys.

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We report measurements of the breakdown curves of a radio-frequency capacitive discharge in low pressure ammonia. The electron drift velocity was determined from the location of turning points in the breakdown curves in the range of E/p = 42–713 V cm−1 Torr−1. We compare our results to values calculated from the published cross-sections in the range E/p = 1–5000 V cm−1 Torr−1 and find good agreement.

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Section: Introductionmentioning

confidence: 99%

Electron drift velocity in NH₃in strong electric fields determined from rf breakdown curves

Lisovskiy¹,

Martins²,

Landry³

et al. 2005

J. Phys. D: Appl. Phys.

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“…In traditional chemical vapor deposition (CVD) processes of a -Si 3 N 4 , the hydrogen/oxygen-radicals create an inherently large concentration of defects and thus lead to dielectric charging, which in turn governs either the operation or time-dependent performance degradation in gate dielectrics141516. Therefore, a new option of deposition method should be available through an ultra-high vacuum (UHV) physical deposition process: in an extremely pure and hydrogen-free environment that contains only the constituent elements (Si, N) for a -Si 3 N 4 deposition, and has extendibility to very large substrates with carefully source-substrate geometry design for both Si and N atoms having good uniformity of arrival rate over entire substrate area.…”

mentioning

confidence: 99%

Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

Tsai

Wang

Lee

et al. 2016

Sci Rep

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In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

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“…Two groups have shown that the exposure of SiO 2 -coated c-Si samples to NH 3 plasma results in a drastic increase in the amount of interface defects. 5,6 In addition, Jin et al exposed SiO 2 -passivated c-Si with NH 3 plasma at room temperature, leading to a significant increase in surface recombination. 7 The origin of the increase in defect density at SiO 2 /c-Si interface upon plasma exposure has been speculated to be an interface damage induced by the penetration of energetic ions such as NÀH radicals 6 and/ or H radicals.…”

mentioning

confidence: 99%

“…5,6 In addition, Jin et al exposed SiO 2 -passivated c-Si with NH 3 plasma at room temperature, leading to a significant increase in surface recombination. 7 The origin of the increase in defect density at SiO 2 /c-Si interface upon plasma exposure has been speculated to be an interface damage induced by the penetration of energetic ions such as NÀH radicals 6 and/ or H radicals. 8,9 The SiO 2 /c-Si interface may also suffer from radiation damage during plasma exposure, which is found to induce additional interface defects at amorphous silicon (a-Si)/c-Si interface.…”

mentioning

confidence: 99%

Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

Wan

McIntosh²,

Thomson

et al. 2015

Applied Physics Letters

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Recombination at silicon nitride (SiNx) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH3) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH3 plasma exposure causes (i) an increase in the density of Si≡N3 groups in both SiNx and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiNx/c-Si interface, and (iv) a reduction in the density of positive charge in SiNx. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiNx or a-Si. It is therefore important for device performance to minimize NH3 plasma exposure of SiNx or a-Si passivating films during subsequent fabrication steps.

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Thin thermal SiO2 after NH3 or N2O plasma action under plasma-enhanced chemical vapor deposition conditions

Cited by 9 publications

References 34 publications

Electron drift velocity in NH₃in strong electric fields determined from rf breakdown curves

Electron drift velocity in NH₃in strong electric fields determined from rf breakdown curves

Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

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Thin thermal SiO2 after NH3 or N2O plasma action under plasma-enhanced chemical vapor deposition conditions

Cited by 9 publications

References 34 publications

Electron drift velocity in NH3in strong electric fields determined from rf breakdown curves

Electron drift velocity in NH3in strong electric fields determined from rf breakdown curves

Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

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Electron drift velocity in NH₃in strong electric fields determined from rf breakdown curves

Electron drift velocity in NH₃in strong electric fields determined from rf breakdown curves