Abstract:A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed (LFI LDMOS). A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to th… Show more
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