Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Velusamy, Dhinesh Babu; Kim, Richard Hahnkee; Takaishi, Kazuto; Muto, Tsuyoshi; Hashizume, Daisuke; Lee, So-Yoon; Uchiyama, Masanobu; Aoyama, Tetsuya; Ribierre, Jean Charles; Park, Cheolmin

doi:10.1016/j.orgel.2014.07.035

Cited by 14 publications

(5 citation statements)

References 46 publications

(74 reference statements)

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“…The prominent P ‐ E hysteresis features in the polymer NP x agreed well with the large anticlockwise I DS ‐ V GS hysteresis characteristics in the corresponding Memory‐ NP x . Furthermore, the synchronously measured I GS ‐ V GS characteristics in the Memory‐ NP x showed obvious hysteresis features, similar to those of the ferroelectric OFET‐NVMs based on the well‐known poly(vinylidenefluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)] gate dielectric, in which two prominent peaks of I GS at the switching V GS indicated the displacement current caused by dipolar polarization switching.…”

Section: Resultssupporting

confidence: 57%

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials as Functional Gate Dielectrics

Zou

Guo

et al. 2019

Adv Elect Materials

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Organic field‐effect transistor‐ (OFET‐) based nonvolatile memories (NVMs) are becoming more important as a core component in flexible and wearable electronics. New polymer materials containing abundant hydroxyl groups are synthesized and employed as the functional gate dielectric for OFET‐NVM devices. The dependence of the memory performances on the hydroxyl content of the polymers is investigated. A variety of gate dielectric structures are proposed to verify that the memory mechanism originates from the reversible remnant polarization of hydroxyl groups in the polymers and to improve the retention capability of the OFET‐NVM devices by preventing the charge trapping in the polymers at the reading state. As a result, good memory performance is achieved with a large memory window of 33.7 V and memory on/off ratio of 1.1 × 104 on average, long retention properties with clearly distinguishable binary states over 10 000 s, and reliable writing/erasing switching endurance over 200 cycles in the optimal OFET‐NVM device, in which the polymer with the most hydroxyl content is sandwiched by two insulator films. Good strategies for the design of the polarizable polymers as the functional gate dielectrics and for improvement of OFET‐NVM device performance are demonstrated.

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Section: Resultssupporting

confidence: 57%

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials as Functional Gate Dielectrics

Zou

Guo

et al. 2019

Adv Elect Materials

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“…To overcome the aforementioned issues, a promising approach is to create multifunctional hybrid photodetectors by simple solution mixing of MoS 2 with other 2D materials. The different band gaps and dark currents of 2D materials and the low‐cost solution process offers a convenient route to engineering and controlling the photodetection properties . In addition, the arrays of hybrid photodetectors fabricated on flexible substrates, such as plastic and paper, would be beneficial for future wearable applications …”

Section: Introductionmentioning

confidence: 99%

2D Organic–Inorganic Hybrid Thin Films for Flexible UV–Visible Photodetectors

Velusamy

Haque

Parida

et al. 2017

Adv Funct Materials

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137

106

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as hybridization of MoS 2 with quantum dots and heterostructures with other 2D materials to suppress the dark current and enhance the broad spectral range in the NIR region were attempted. While convenient, these approaches are not scalable for large-scale implementation due to the complicated procedures as well as expensive material and instrument-related costs. [17][18][19] To overcome the aforementioned issues, a promising approach is to create multifunctional hybrid photodetectors by simple solution mixing of MoS 2 with other 2D materials. The different band gaps and dark currents of 2D materials and the low-cost solution process offers a convenient route to engineering and controlling the photodetection properties. [20][21][22] In addition, the arrays of hybrid photodetectors fabricated on flexible substrates, such as plastic and paper, would be beneficial for future wearable applications. [23,24] Recently, 2D organic semiconductors, such as graphitic carbon nitride (g-C 3 N 4 ), have emerged as promising UV-and visible-light-active photocatalysts in the arena of solar energy conversion and environmental applications. [25][26][27][28] Their unique electrical and optical properties, wide band gap (≈2.7 eV), stability in ambient conditions, and low dark current make them attractive for UV light photodetection, but very little work has been carried out so far. Compared to other 2D materials, by considering its merits, g-C 3 N 4 is a promising candidate for hybridizing with MoS 2 because not only does it suppress the dark current of MoS 2 , but also allows hybrid broadband photodetection from UV to visible region. In addition, the crystal lattice matching [29,30] and the ultrafast charge transfer between MoS 2 and g-C 3 N 4 at the interface may lead to efficient separation of photogenerated carriers, as predicted by a recent computational study. [31] Herein we report, to the best of our knowledge for the first time, mechanically flexible 2D organic-inorganic hybrid thin film photodetectors consisting of inorganic MoS 2 and organic g-C 3 N 4 nanosheets for broadband photodetection. Simple but robust solution mixing of MoS 2 and g-C 3 N 4 offers an extremely convenient route to controlling their composition in the hybrid films and thus allows for tuning the optoelectronic properties. Hybrid thin films with 5:5 ratio of MoS 2 and g-C 3 N 4 (henceforth denoted as 5:5 hybrid films) exhibited excellent photodetection performance in terms of ON/OFF photocurrent ratio, specific detectivity, responsivity, and response time upon both Flexible 2D inorganic MoS 2 and organic g-C 3 N 4 hybrid thin film photodetectors with tunable composition and photodetection properties are developed using simple solution processing. The hybrid films fabricated on paper substrate show broadband photodetection suitable for both UV and visible light with good responsivity, detectivity, and reliable and rapid photoswitching characteristics comparable to monolayer devices. This excellent performance is retained even after the films are severely...

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“…The device was also measured with a high ON/OFF ratio of 10 3 or higher, 1000 times programming cycles, and a retention time longer than a week. Inspired by these pioneer works, novel OFeFETs have been intensively studied and developed for a decade toward high performance, 33–46 high flexibility 33,43,47–51 and clarification of their operation mechanism; 52–54 most of the studies are focused on optimization of the ferroelectric gate insulators and semiconducting channels.…”

Section: Polymer‐based Ferroelectric Field‐effect Transistorsmentioning

confidence: 99%

“…Velusamy et al . reported a flexible OFeFET device using polyimide as substrate, which has an additional layer of polymer modified reduced graphene oxide (PMrGO) between the PVDF insulator layer and the gate electrode 33 . The introduction of the PMrGO layer not only significantly reduced the gate leakage current but also lowered the operation voltage of the devices.…”

Section: Flexible Ofefet Devicesmentioning

confidence: 99%

Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

Zhu

Mitsuishi

2020

Polymer International

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Organic electronics have attracted considerable interest because of their low temperature solution processability, versatile material synthesis and compatibility with a wide range of traditional fabrication methods such as rod‐coating, inkjet and roll‐to‐roll printing techniques. Organic ferroelectric field‐effect transistors (OFeFETs) with a three‐terminal device architecture have ferroelectric thin films as gate insulator layers and semiconductor films as charge transport channel layers. OFeFETs have been demonstrated with non‐volatile memory functions that can retain their high or low conductive states in the semiconductor channel when the power is turned off. The reversible polarization switching in the ferroelectric gate insulator layer between two stable polarized states provides the basis for binary coded memory functions. In this review, we summarize recent development of OFeFETs based on ferroelectric poly(vinylidene fluoride) dielectrics and organic semiconductor channels. © 2020 Society of Chemical Industry

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Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Cited by 14 publications

References 46 publications

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials as Functional Gate Dielectrics

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials as Functional Gate Dielectrics

2D Organic–Inorganic Hybrid Thin Films for Flexible UV–Visible Photodetectors

Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

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