Thin polycrystalline metallic-film conductivity under the assumption of isotropic grain-boundary scattering

Tosser, A. J.; Tellier, C. R.; Pichard, C. R.

doi:10.1007/bf00542738

Cited by 16 publications

References 24 publications

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Simple analytical expression for the hall coefficient of polycrystalline metal films at low magnetic field

Pichard¹,

Tellier

Tosser³

1981

Phys. Stat. Sol. (a)

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Theoretical aspects films in the Mayadas-Shatzkes model /1/ (M-S model), and the Fuchs-Sondheimer model (F-S model) /2/ have shown /3/ that the M-S model can reduce to an effective F-S model, provided the electrical parameters of the bulk material be replaced by those of the infinitely thick polycrystalline film; this effective model can be theoretically based on an effective mean free path model Theoretical calculations of the conductivity of thin metal /4/. In the F-S conduction model /2, 5/ the general expression for the transverse Hall coefficient RHFs has been calculated /6/ with the aid of the Cottey model /7/. For low magnetic field, RI.,Fs can be expressed /8, 9 / by the following relation: 1 where Q~~ is the film resistivity and suming that the film is unsupported and neglecting any thermal variation except in the electronic mean free path; the index o marks the bulk parameters.BFSu its temperature coefficient, as-It must be noted that the introduction of an effective mean free path for representing both the effects of background and grain-boundary scatterings (i.e. the scatterings which occur in an infinitely thick polycrystalline film) is compatible with the procedure used for solving the Boltzmann transport equation /1 O/ since the conditions of validity for Sondheimer calculations /lo, 11/ a r e not altered.The effective form deduced from (1) is then 1) C

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