Thin manganite films for fast fault current limiter applications

Žurauskienė, N.

doi:10.1016/j.tsf.2005.12.172

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…At low electric field strengths E < E th = V th /l, the ER effect is very small and can be neglected. The values of E th and ER depend on the chemical composition, temperature, and morphology of the film [4]. Analysis of the ρ-versus-E dependence by fitting normalized conductance G/G 0 to the phenomenological relation G/G 0 = 1 + G α · V α , where G 0 is the conductance at low voltages and G α and α are the parameters related to a transport mechanism, showed that α falls in the range between 1.3 and 2.5, which was predicted for multistep tunneling through two or three states in grain boundaries, respectively [7].…”

Section: Resultsmentioning

confidence: 99%

“…In recent years, significant progress in microwave cryogenic electronics operating at liquid nitrogen temperatures has been achieved. Symmetrical thin-film limiters using current-induced phase transitions from superconducting to normal state [3] tance" (ER) effect [4] were proposed to be capable of protecting electronic front ends from EMP. These materials could ensure subnanosecond response of limiters and withstand short EMP action.…”

Section: Introductionmentioning

confidence: 99%

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Fast Protector Against EMP Using Thin Epitaxial and Polycrystalline Manganite Films

Balevičius

Žurauskienė

Stankevič

et al. 2011

IEEE Electron Device Lett.

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A new fast high-power fault current limiter made from epitaxial and polycrystalline La 0.83 Sr 0.17 MnO 3 thin films and operating at 80 K has been demonstrated. An epitaxial film that exhibits a current-induced increase in its resistance is connected in series with a 50-Ω-impedance transmission line, while a polycrystalline film whose resistance decreases with an increase in current is connected in parallel. It has been demonstrated that, when the fault current pulse has an amplitude of 200 V, a rise time of 0.5 ns, and a pulselength of 18 ns, the limitation of its amplitude is 3.5 dB after the rise time and 8 dB at the end of the pulse.Index Terms-Electric field effects, fault current limiter, thinfilm devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fast Protector Against EMP Using Thin Epitaxial and Polycrystalline Manganite Films

Balevičius

Žurauskienė

Stankevič

et al. 2011

IEEE Electron Device Lett.

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“…The "front-door" and the "indoor" can be either passive or active electronic units. For example, various voltage and current limiters, based on non-crystalline semiconductors [11], superconductors [12] and magnetic materials [13][14][15] are used as the "front--door" protectors. The best protection effect is achieved when all these measures are applied simultaneously.…”

Section: Introductionmentioning

confidence: 99%

"Indoor" Protection of Electronic Systems by Means of High-Pass Negative Feedback

et al. 2009

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An extremely simple first order RC high-pass filter is suggested to suppress harmful radio frequency oscillations, induced by high power electromagnetic pulses. Specifically, a broadband single stage transistor amplifier with a parasitic wiring inductance and also the parasitic junction and mounting capacitances are investigated both numerically and experimentally in the very high and ultrahigh frequency bands.

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“…As a result, the irreversible damaging of the device occurs mainly at the electrode regions. This phenomenon is very important for designing protectors against short electromagnetic pulse (SEMP) [2], because it increases the attenuation in protecting regime, but at the same time it also limits the highest possible power of device operation. In order to reveal the nature and behavior of the switching we investigated high current regime in epitaxial films having the same chemical composition as polycrystalline films used for protectors against SEMP.…”

Section: Introductionmentioning

confidence: 99%

Fast Electrical Switching of Thin Manganite Films

et al. 2008

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The effects of strong pulsed electric field on the electrical properties of thin epitaxial La0.7Sr0.3MnO3 films were investigated. The fast electrical switching from high resistance off-state to low resistance on-state was obtained at current densities higher than 10 6 A/cm 2 . This current was able to induce an irreversible damage of the sample in the regions at the edges of the electrodes of the film. It was demonstrated that thermal effects are responsible for appearance of delay time and asymmetrical shape of current channel in on-state, however, the fast switching from off-to on-state is a result of electronic effects appearing when critical power is reached in the film.PACS numbers: 75.47.Lx, 75.47.Gk, 73.50.Fq IntroductionRecently, an interest to high current effects in manganites had increased [1]. It was obtained that high current induces an electrical instability (switching) in thin polycrystalline manganite film, the process during which the resistance of the film suddenly decreases several times. As a result, the irreversible damaging of the device occurs mainly at the electrode regions. This phenomenon is very important for designing protectors against short electromagnetic pulse (SEMP) [2], because it increases the attenuation in protecting regime, but at the same time it also limits the highest possible power of device operation. In order to reveal the nature and behavior of the switching we investigated high current regime in epitaxial films having the same chemical composition as polycrystalline films used for protectors against SEMP.2. Film preparation technology The investigated samples were made from La 0.83 Sr 0.17 MnO 3 films which had been prepared using metal organic chemical vapour deposition (MOCVD) from a

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Thin manganite films for fast fault current limiter applications

Cited by 7 publications

References 6 publications

Fast Protector Against EMP Using Thin Epitaxial and Polycrystalline Manganite Films

Fast Protector Against EMP Using Thin Epitaxial and Polycrystalline Manganite Films

"Indoor" Protection of Electronic Systems by Means of High-Pass Negative Feedback

Fast Electrical Switching of Thin Manganite Films

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