Thin Insulating Tunneling Contacts for Efficient and Water‐Resistant Perovskite Solar Cells

Wang, Qi; Dong, Qingfeng; Li, Tao; Gruverman, Alexei; Huang, Jinsong

doi:10.1002/adma.201600969

Cited by 572 publications

(505 citation statements)

References 38 publications

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“…Yang et al utilized hydrophobic ammonium ions to modify the surface of a perovskite layer and improved the moisture stability 15 . Wang et al utilized a hydrophobic fluorosilane layer as a water-resistant layer, resulting in greater stability of the perovskite film in water 16 . Nevertheless, these studies have ignored the band position matching factor (BPMF) between the barrier layer and the perovskite layer.…”

Section: Introductionmentioning

confidence: 99%

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

et al. 2018

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Although great efforts have been devoted to enhancing the efficiency and stability of perovskite solar cells (PSCs), the performance of PSCs has been far lower than anticipated. Interface engineering is helpful for obtaining high efficiency and stability through control of the interfacial charge transfer in PSCs. This paper demonstrates that the efficiency and stability of PSCs can be enhanced by introducing stable α-CsPbI 3 quantum dots (QDs) as an interface layer between the perovskite film and the hole transport material (HTM) layer. By synergistically controlling the valence band position (VBP) of the perovskite and the interface layer, an interface engineering strategy was successfully used to increase the efficiency of hole transfer from the perovskite to the HTM layer, resulting in the power conversion efficiency increasing from 15.17 to 18.56%. In addition, the enhancement of the stability of PSCs can be attributed to coating inorganic CsPbI 3 QDs onto the perovskite layer, which have a high moisture stability and result in long-term stability of the PSCs in ambient air.

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Section: Introductionmentioning

confidence: 99%

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

et al. 2018

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“…Inspired by the success of applying tunneling contacts in silicon solar cells, Wang et al inserted polystyrene (PS), Teflon, and polyvinylidene-trifluoroethylene copolymer (PVDF-TrFE) between perovskite and ETM. [127] The thin insulating layer allowed the transport of photogenerated electrons in perovskite to C 60 through tunneling, and blocked the photo generated holes . With 1% PS used as the tunneling layer, a PCE as high as 20.3% was obtained.…”

Section: The Perovskite/etm Interfacementioning

confidence: 99%

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

Yang

Meng

Yang

2017

Advanced Energy Materials

370

265

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Organic‐inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO2 mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large‐scale production. In particular, the planar p‐i‐n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p‐i‐n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p‐i‐n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p‐i‐n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.

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“…Organic–inorganic lead halide perovskite (PVK), with its outstanding photophysical properties and versatility in low‐temperature solution processes,1, 2, 3, 4, 5, 6, 7, 8 is considered one of the most promising materials for thin‐film solar cells 9, 10, 11. In just the few years since its invention, the power conversion efficiency (PCE) of the organic–inorganic hybrid PVK solar cell (PSC) based on mixed cations and halides has been rapidly increased to as high as 22.7% 12, 13, 14…”

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confidence: 99%

CsPbCl₃‐Driven Low‐Trap‐Density Perovskite Grain Growth for >20% Solar Cell Efficiency

et al. 2018

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Charge recombination in grain boundaries is a significant loss mechanism for perovskite (PVK) solar cells. Here, a new strategy is demonstrated to effectively passivate trap states at the grain boundaries. By introducing a thin layer of CsPbCl3 coating before the PVK deposition, a passivating layer of PbI2 is formed at the grain boundaries. It is found that at elevated temperature, Cl− ions in the CsPbCl3 may migrate into the PVK via grain boundaries, reacting with MA+ to form volatile MACl and leaving a surface layer of PbI2 at the grain boundary. Further study confirms that there is indeed a small amount of PbI2 distributed throughout the grain boundaries, resulting in increased photoluminescence intensity, increased carrier lifetime, and decreased trap state density. It is also found that the process passivates only grain surfaces, with no observable effect on the morphology of the PVK thin film. Upon optimization, the obtained PVK‐film‐based solar cell delivers a high efficiency of 20.09% with reduced hysteresis and excellent stability.

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Thin Insulating Tunneling Contacts for Efficient and Water‐Resistant Perovskite Solar Cells

Cited by 572 publications

References 38 publications

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

CsPbCl₃‐Driven Low‐Trap‐Density Perovskite Grain Growth for >20% Solar Cell Efficiency

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Thin Insulating Tunneling Contacts for Efficient and Water‐Resistant Perovskite Solar Cells

Cited by 572 publications

References 38 publications

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Interface Engineering for Highly Efficient and Stable Planar p‐i‐n Perovskite Solar Cells

CsPbCl3‐Driven Low‐Trap‐Density Perovskite Grain Growth for >20% Solar Cell Efficiency

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CsPbCl₃‐Driven Low‐Trap‐Density Perovskite Grain Growth for >20% Solar Cell Efficiency