Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Abstract

Articles you may be interested inComposite-layered solid-state field controlled emitter for a better control of the cathode surface barrier J. Vac. Sci. Technol. B 23, 824 (2005); 10.1116/1.1864065Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains J.Cold cathode structures have been fabricated using AlN and graded AlGaN structures ͑deposited on n-type 6H-SiC͒ as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO 2 layer and etched to form arrays of either 1, 3, or 5 m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 m holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 10 4 times the collector currents.

Growth and Field Emission of Hierarchical Single‐Crystalline Wurtzite AlN Nanoarchitectures

“…Anodized alumina membranes have been widely used in order to prepare metal and semiconductor nanowires via electrodeposition [15,16] and carbon and dielectric nanotubes using vapor deposition methods. [17,18] We have previously used commercially available (Whatman) nanoporous alumina membranes with a nominal pore diameter of 200 nm for the VLS growth of SiNWs. [19] The SiNWs were single crys- [20] Nanoporous alumina membranes have also been used to produce metal±semiconductor nanowires such as CoSi x /Si [21] and Ag/Si [22] by combining metal electrodeposition with VLS growth.…”

“…From the available reported data, the threshold electric field for AlN was as high as 60 V lm ±1 . [18] Tondare et al [20] found 10 nA and 1 lA FE currents from polycrystalline AlN nanotubes at applied voltages of 4 kV and 7.7 kV, respectively. A threshold electric field of 34 V lm ±1 for heavily Si-doped AlN has been reported by Kasu et al [16] The threshold field values in this work for the AlN nanoarchitectures are comparable to that observed for many other types of field emitters, such as that for openended carbon nanotubes (5 V lm ±1 ), [21] needle-shaped SiC …”

Oxidation of GaN{0001}-1 1 surfaces at room temperature

“…As well as other III-nitrides it has attracted great interest because of its applications in optoelectronic devices. Besides light-emitting diodes and blue lasers that already reached the market, III-nitrides are also suitable materials for photocathodes and cold-cathode emission devices [1][2][3]. A prerequisite for efficient electron emission is that the vacuum level is moved to below the conduction-band bottom in the bulk.…”

Выращивание ориентированных пленок AlN на подложках сапфира методом плазмоактивированного атомно-слоевого осаждения

“…DOI: 10.21883/PJTF.2017.01. 44091.16401 Тонкие пленки нитрида алюминия (AlN) перспективны для изготов-ления холодных катодов [1], силовых приборов [2], газовых сенсоров [3], УФ-светодиодов, фотодетекторов [4], пьезоэлектрических RF-MEMS устройств [5], а также в качестве буферных слоев для роста пленок нитридов галлия [6]. Для этих применений важно получать кристал-лические пленки, а также контролировать их кристаллографическую ориентацию.…”