2022
DOI: 10.1039/d1dt03690d
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Thin films composed of Zr-doped In2O3 grains rich in fracture surfaces and cracks for photoelectrochemical water oxidation

Abstract: Zr doped In2O3 thin films are prepared on FTO substrates by a two-step method: firstly, Zr-doped In(OH)3 thin films are hydrothermally deposited, and then converted to Zr-doped In2O3 films by...

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Cited by 4 publications
(2 citation statements)
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“…29,36 The optical property was characterized by UV-vis diffuse reflectance, and Tauc's plots was used to analyze the bang gap of In 2 O 3 and Cl-GQDs/In 2 O 3 . 1 The absorption regions of In 2 O 3 in the ultraviolet range were shown in Fig. 4a, and the calculated band gap was 2.46 eV.…”
Section: Resultsmentioning
confidence: 96%
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“…29,36 The optical property was characterized by UV-vis diffuse reflectance, and Tauc's plots was used to analyze the bang gap of In 2 O 3 and Cl-GQDs/In 2 O 3 . 1 The absorption regions of In 2 O 3 in the ultraviolet range were shown in Fig. 4a, and the calculated band gap was 2.46 eV.…”
Section: Resultsmentioning
confidence: 96%
“…Among metal oxide semiconductor nanomaterials, indium oxide (In 2 O 3 ) as a characteristic n-type semiconductor with a band gap of 2.0-3.6 eV, had been widely applied in photodetectors, solar cells, photocatalytic degradation and gas detection. [1][2][3][4][5] Many advantages of In 2 O 3 , such as excellent optoelectronic properties, high electrical conductivity, tunable band gap and light absorption ability, had made it attracted widespread attention. [6][7][8][9] Essential for optical semiconductor devices was the ability to absorb visible light and the rapid separation of photogenerated electron-hole pairs.…”
mentioning
confidence: 99%