Thin-film thermocouples of Ge doped with Au and B

Berlicki, T.M.; Murawski, E.; Muszyński, M.; Osadnik, S.J.; Prociów, E.

doi:10.1016/0924-4247(95)01084-x

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…The Au–Si and Au–Ge alloys are important in fabrication of microelectronics, microsensors, and new nanomaterials. − Understanding the structures and electronic properties of Au-doped semiconductor clusters may provide useful information for the development of semiconductor nanomaterials and for their potential applications in industry. The structures of Au-doped silicon clusters − and Au-doped germanium clusters − were studied previously by many calculations.…”

Section: Introductionmentioning

confidence: 99%

Spin–Orbit Splittings and Low-Lying Electronic States of AuSi and AuGe: Anion Photoelectron Spectroscopy and ab Initio Calculations

Tran

Zhao

et al. 2018

J. Phys. Chem. A

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We measured the photoelectron spectra of diatomic AuSi and AuGe and conducted calculations on the structures and electronic properties of AuSi and AuGe. The calculations at the CASSCF/CASPT2 level confirmed that experimentally observed spectra features of AuSi and AuGe can be attributed to the transitions from the Σ anionic ground state to the Π (Π and Π), Σ, 3Σ, and 4Σ electronic states of their neutral counterparts. The electron affinities (EAs) of AuSi and AuGe are determined by the experiments to be 1.54 ± 0.05 and 1.51 ± 0.05 eV, respectively. The spin-orbit splittings (Π-Π) of AuSi and AuGe measured in this work are in agreement with the literature values. The energy difference between the Σ (A) and Π states of AuSi obtained in this work is in reasonable agreement with the literature value, while that of AuGe obtained in this work by anion photoelectron spectroscopy is slightly larger than the literature value by neutral emission spectroscopy. The term energies of the 3Σ (B) and 4Σ (C) states of AuSi and AuGe were also determined based on the photoelectron spectra. Because of the different bond lengths between the anionic and neutral states, the electronic state terms energies of AuSi and AuGe estimated from the anion photoelectron spectra might be slightly different from those obtained from the neutral emission spectra.

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Section: Introductionmentioning

confidence: 99%

Spin–Orbit Splittings and Low-Lying Electronic States of AuSi and AuGe: Anion Photoelectron Spectroscopy and ab Initio Calculations

Tran

Zhao

et al. 2018

J. Phys. Chem. A

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“…It has been found half a century ago that gold-doped germanium can be used to produce an infrared high-frequency photodetector 23 due to its high charge carrier mobility and long wavelength response. It has also been suggested that gold-doped germanium films can be used for fabrication of thermopiles in some types of microsensors 24 and for ultralow mass highly sensitive cryogenic phonon sensors 25 because of their high thermoelectric power and hot electron effects. The synthesis and characterization of Au-Ge clusters showed that the chemistry of metalloid Group 14 cluster compounds can open the way to fabricate new and unusual nanomaterials.…”

Section: Introductionmentioning

confidence: 99%

Transition from exohedral to endohedral structures of AuGe_n⁻ (n = 2–12) clusters: photoelectron spectroscopy and ab initio calculations

et al. 2016

Phys. Chem. Chem. Phys.

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Gold-doped germanium clusters, AuGen(-) (n = 2-12), were investigated by using anion photoelectron spectroscopy in combination with ab initio calculations. Their geometric structures were determined by comparison of the theoretical calculations with the experimental results. The results show that the most stable isomers of AuGen(-) with n = 2-10 are all exohedral structures with the Au atom capping the vertex, edge or face of Gen clusters, while AuGe11(-) is found to be the critical size of the endohedral structure. Interestingly, AuGe12(-) has an Ih symmetric icosahedral structure with the Au atom located at the center. The molecular orbital analysis of the AuGe12(-) cluster suggests that the interactions between the 5d orbitals of the Au atom and the 4s4p hybridized orbitals of the Ge atoms may stabilize the Ih symmetric icosahedral cage and promote the Au atom to be encapsulated in the cage of Ge12. The NICS(0) and NICS(1) values are calculated to be -143.7 ppm and -36.3 ppm, respectively, indicating that the icosahedral AuGe12(-) cluster is significantly aromatic.

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“…Dopants affect the mechanical properties of gold wires due to the differences in the arrangement and sizes of the elements in the microstructure of polycrystalline gold. [4][5][6] The measurement of the amount of dopants present in gold bonding wires, and of the dopants' trace impurities (which must be less than 0.01%), plays a critical role in quality control. Several spectral, matrix and molecular ion interference have been reported for ICP-MS analysis of gold, so determination limits achieved are around 1 ug g −1 for all studied analytes.…”

Section: Introductionmentioning

confidence: 99%

Determination of Trace Elements of Ge and P in a Gold Bonding Wire by Inductively Coupled Plasma Atomic Emission Spectrometry

Choi¹,

Lee

Han³

2008

Bulletin of the Korean Chemical Society

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Inductively coupled plasma atomic emission spectrometry (ICP-AES) was used to determine the presence of germanium and phosphorus in a pure gold bonding wire. The samples were dissolved with hydrobromic acid and nitric acid at room temperature. The quantitation limits were 0.012 mg L −1 at 265.118 nm for Ge and 0.009 mg L −1 at 177.495 nm for P. Using the mixed acid digestion formula of DIW + HBr + HNO 3 , the recoveries were in the range of 98-100% and the relative standard deviation was within 1.1-2.3%. On the other hand, the amount of Ge decreased by about 16.2% using DIW + HCl + HNO 3 , due to the formation of a volatile compound. The Ge contents determined using the external method and the standard addition method were 9.45 mg kg −1 and 9.24 mg kg −1 , respectively, and the P contents, using the same methods, were 22.49 mg kg −1 and 23.09 mg kg −1 , respectively. Both methods were successfully used to determine the trace amounts of P and Ge in the pure gold bonding wire samples.

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Thin-film thermocouples of Ge doped with Au and B

Cited by 10 publications

References 9 publications

Spin–Orbit Splittings and Low-Lying Electronic States of AuSi and AuGe: Anion Photoelectron Spectroscopy and ab Initio Calculations

Spin–Orbit Splittings and Low-Lying Electronic States of AuSi and AuGe: Anion Photoelectron Spectroscopy and ab Initio Calculations

Transition from exohedral to endohedral structures of AuGe_n⁻ (n = 2–12) clusters: photoelectron spectroscopy and ab initio calculations

Determination of Trace Elements of Ge and P in a Gold Bonding Wire by Inductively Coupled Plasma Atomic Emission Spectrometry

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Thin-film thermocouples of Ge doped with Au and B

Cited by 10 publications

References 9 publications

Spin–Orbit Splittings and Low-Lying Electronic States of AuSi and AuGe: Anion Photoelectron Spectroscopy and ab Initio Calculations

Spin–Orbit Splittings and Low-Lying Electronic States of AuSi and AuGe: Anion Photoelectron Spectroscopy and ab Initio Calculations

Transition from exohedral to endohedral structures of AuGen− (n = 2–12) clusters: photoelectron spectroscopy and ab initio calculations

Determination of Trace Elements of Ge and P in a Gold Bonding Wire by Inductively Coupled Plasma Atomic Emission Spectrometry

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Transition from exohedral to endohedral structures of AuGe_n⁻ (n = 2–12) clusters: photoelectron spectroscopy and ab initio calculations