Thin-Film Solar Cells Performances Optimization: Case of Cu (In, Ga) Se₂-ZnS

Abstract

In this chapter, we investigate a way of improving solar cells performances. By focusing studies on optimizing the structural, the opto-electrical and electronic properties of materials that constitute the layers and interfaces of a solar device, such as electrical susceptibility, doping concentration, mobility of charge carriers and crystallographic structure, it is possible to improve the output parameters of a solar cell. Working on a CIGSe-based second-generation ultra-thin solar cell model, and using Zinc Sulfide (ZnS) as a window layer, and based on recent studies, vital information are found on the optimal values of these properties that may enhance the efficiency of the cell. A correct modeling of the device with a trusted software such as SCAPS and an appropriate set of the exact conditions and parameters of simulation allow to obtain very promising results. In particular, for nanoscale and microscale thicknesses of buffer and absorber layers materials respectively, and with an appropriate choice of other materials properties such as intrinsic doping concentration, electrons and holes mobilities, it is possible to record efficiencies and fill factors of more than 26% and 85% respectively. These values are very promising for solar energy harvesting technologies development through CIGSe – ZnS based solar devices.

Enhancing the Performance of an Sb2Se3-Based Solar Cell by Dual Buffer Layer

“…We have used the ZnS buffer layer as an alternative to the CdS layer because ZnS is a more efficient layer than other buffer layers, such as ZnO [12], ZnSe [13], SnO 2 [14], TiO 2 [15], etc., as ZnS has a wide direct bandgap of 3.5-3.8 eV. The wide bandgap provides a high optical transparency of >94% in the visible and infrared regions of the solar spectrum, and a high absorption coefficient in the ultraviolet region [16]. It is also nontoxic.…”