Thin Film Solar Cells

Chopra, K. L.; Das, Samaresh

doi:10.1007/978-1-4899-0418-8

Cited by 455 publications

(211 citation statements)

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“…The maximum efficiency is reached for P max = J opt ·V opt where J opt and V opt are the current (per unit area) and the device voltage optimized for maximum power. Here, the current J and the device voltage V are balanced within the Shockley ideal diode equation [25][26][27]:…”

Section: Methodsmentioning

confidence: 99%

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

Chen

Persson

2017

EPJ Photovolt.

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We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1−xTex)2. This is explained by multivalley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1−xTex)2 is at ω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50−150 nm, and the efficiency increases to ∼30% if the Auger effect is diminished.

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Section: Methodsmentioning

confidence: 99%

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

Chen

Persson

2017

EPJ Photovolt.

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“…One ofthe earliest PV thin film systems was CdS: CUzS heterojunctions, modules of which were marketed recently with an efficiency of 3-5 % (Chopra and Das 1983). However, they turned out to show decay after about six months for various reasons, including Cu diffusion and inadequate hermetic sealing against water vapour.…”

Section: Cuprous Sulfide Heterojunctionsmentioning

confidence: 99%

Solar Electricity and Recent Progress in Thin Film Photovoltaics

Haneman¹

1984

Aust. J. Phys.

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Aust. J. Phys., 1984, 37, 449-62 Current methods of producing electricity from solar energy are summarized. The role of photovoltaics is described and the increasing importance of thin film technology. The photovoltaic industry is doing well over $10 8 worth of business in 1984 with a growth rate of about 50 % p.a. Already over 15 % of the output is in the form of thin films, practically all as amorphous hydrogenated silicon.A number of other thin film systems are being actively explored, most of them semiconductor heterojunctions, including CdS: Cu2S and CuInSe2 : CdS. The problems of durability and cost effective production are yielding under major research and development efforts on thin semiconductor films and interfaces.

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“…These properties of CdSe are very sensitive to deposition condition and to the technique used. CdSe thin film has been prepared using a variety of methods including sputtering, spray pyrolysis, electro-deposition and thermal evaporation under high vacuum 9,10 . In view of this, the present study deals with preparation of silver doped of CdSe thin films by Chemical Bath Deposition (CBD) method at room temperature under basic condition on glass substrates.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Silver Doped CdSe Thin Film by Triethanolamine Complex Method at Room Temperature

2018

Chem Sci Trans

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Abstract:The silver doped thin film of CdSe has been deposited onto clean glass substrate by using chemical bath deposition technique.CdSe thin film doped with silver showed well defined peak with narrow width. From the XRD pattern, it was observed that the deposited thin film has both hexagonal (002) H and cubic phase (111) C with preferred orientation in the (111) direction. Absorption spectra of this film have been recorded using spectrophotometer. The thickness of the film has been determined by gravimetric method. The energy band gap has been calculated using Tauc's method. It is found that energy band gap of Ag doped CdSe thin film is 1.74 eV.

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Thin Film Solar Cells

Cited by 455 publications

References 0 publications

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

Solar Electricity and Recent Progress in Thin Film Photovoltaics

Synthesis of Silver Doped CdSe Thin Film by Triethanolamine Complex Method at Room Temperature

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Thin Film Solar Cells

Cited by 455 publications

References 0 publications

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

Solar Electricity and Recent Progress in Thin Film Photovoltaics

Synthesis of Silver Doped CdSe Thin Film by Triethanolamine Complex Method at Room Temperature

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High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics