Thin Film Receiver Materials for Deterministic Assembly by Transfer Printing

Kim, Tae Il; Kim, Mo Joon; Jung, Yei Hwan; Jang, H. K.; Dağdeviren, Canan; Pao, Hsuan An; Cho, Sang June; Carlson, Andrew; Ameen, Abid; Chung, Hyun‐Joong; Jin, Sung Hun; Rogers, John A.

doi:10.1021/cm501002b

Cited by 38 publications

(40 citation statements)

References 23 publications

(24 reference statements)

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“…LED Transfer Printing : The released freestanding LEDs were transferred onto any substrates, with a spin‐coated adhesive layer . The LEDs printed onto polyimide (75 µm) or double side copper coated polyimide (18 µm Cu/25 µm PI/18 µm Cu) substrates (with 1 µm thick SU‐8 for adhesion) were encapsulated with 2 µm thick SU‐8 as an insulating layer and via patterns were formed by interconnected electrodes with sputtered 10 nm Cr/600 nm Cu/100 nm Au.…”

Section: Methodsmentioning

confidence: 99%

“…Figure a schematically illustrates both types of LEDs transferred onto flexible bare polyimide (PI thickness 75 µm) and double side Cu coated polyimide (18 µm Cu/25 µm PI/18 µm Cu) substrates. A polymer thin‐film (thickness ≈1 µm) serves as an adhesive and electrical insulating layer to bond LEDs and substrates. Figure b plot shows the measured external quantum efficiency (EQE) spectra for both types of LEDs on different substrates.…”

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confidence: 99%

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Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

Liu

et al. 2017

Adv Materials Technologies

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LEDs that can be utilized as implantable light sources have been playing increasingly important roles in neuroscience research, along with the development of genetically encoded actuators and indicators. [3,4] In particular, gallium nitride (GaN)/indium gallium nitride (InGaN) based blue LEDs are utilized as implantable light sources for optogenetic stimulation and/or exciting fluorophores for neural signal sensing. [5,6] High performance GaN blue LEDs are typically grown on rigid, single crystalline substrates including sapphire, [7,8] silicon (Si) [1] and silicon carbide (SiC), [9] and novel strategies on growing and releasing GaN devices on unusual substrates like zinc dioxide coated graphene, [10] boron nitride (BN), [11] amorphous glasses, [12] nanovoid-mediated substrates, [13] etc. are also actively explored. [14] Although diced bare LED chips have found their uses in wearable and implantable systems by flip-chip bonding, [15,16] thinfilm LEDs (with thicknesses less than 10 µm) with various emission wavelengths that are released from original growth substrates and integrated onto flexible and stretchable substrates are more desirable for biomedical applications. [17] Recent results have successfully demonstrated that released, thinfilm LEDs are integrated with flexible, stretchable, and even biodegradable substrates with better biocompatibilities like improved skin conformance and reduced lesion during implantation. [5,18,19] Thin-film, freestanding red and infrared (IR) LEDs based on gallium arsenide can be easily formed by selective sacrificial etching; [20] however, conventional techniques for thinfilm GaN based purple/blue/green LED release and integration typically rely on sophisticated process steps including laser liftoff (LLO) (for GaN on sapphire), [21,22] chemical etching (for GaN on Si), [1,23,24] wafer bonding, [25][26][27] layer transfer, [11] device pick and place, [28,29] etc., [30,31] thus limiting their use. While GaN LED epitaxial liftoff and integration with flexible substrates have been extensively exploited for various planar device architectures like GaN LEDs on graphene, [7,10] BN, [11] glasses with nanovoids, [12,13] Si, [32] SiC-on-insulator, [9] the performance of these devices is still inferior to their counterparts on conventional sapphire substrates, in terms of their current-voltage characteristics, quantum efficiencies, etc. Therefore, it is highly desirable to develop simple and reliable technologies to implement the mainstream, state-of-the-art GaN LEDs (for example,

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Section: Methodsmentioning

confidence: 99%

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confidence: 99%

Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

Liu

et al. 2017

Adv Materials Technologies

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“…An elastomeric polydimethylsiloxane stamp with a micron-sized feature (350 × 350 × 100 µm 3 ) was used to release and print an individual micro-VCSEL on a target substrate using a thin (≈1 µm) photocurable polymeric adhesive. [ 32 ] For V-M-A-P and V-M-A-M-P confi gurations, a thin metal layer (Cr/Ag/Au) was deposited on the exposed bottom surface of released micro-VCSEL before transfer printing. Although silver was used for this proof-of-concept study, more cost-effective combination of metal (e.g., copper) can be chosen for the large-scale implementation.…”

Section: Methodsmentioning

confidence: 99%

Dramatically Enhanced Performance of Flexible Micro‐VCSELs via Thermally Engineered Heterogeneous Composite Assemblies

Kang

Lee

Kwong

et al. 2015

Advanced Optical Materials

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“…The organic bonding layer can be achieved via solution‐based methods and cured by thermal or light treatments to create relatively thick films (>100 nm) that is suitable for interface planarization and tolerable for surface roughness (Figure a). In principle, interfaces formed by organic materials, such as SU‐8, polyimide, and benzocyclobutene (BCB), are electrically and thermal insulating. In some cases, direct bonding is performed between two semiconductor layers to form electrically and thermally conductive interfaces (Figure b).…”

Section: Materials Devices and Systemsmentioning

confidence: 99%

Recent Advances in Biointegrated Optoelectronic Devices

Yin

Liu

et al. 2018

Advanced Materials

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With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted.

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Thin Film Receiver Materials for Deterministic Assembly by Transfer Printing

Cited by 38 publications

References 23 publications

Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

Dramatically Enhanced Performance of Flexible Micro‐VCSELs via Thermally Engineered Heterogeneous Composite Assemblies

Recent Advances in Biointegrated Optoelectronic Devices

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