Thin‐film platinum resistance thermometers: Fabrication and use

Bolker, B. F. T.; Sidles, P. H.

doi:10.1116/1.569123

Cited by 12 publications

(4 citation statements)

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“…In microelectronic thermal management, a PRT can be directly deposited on a semiconductor substrate, such as silicon, and used as both an electrical heater and a thermometer to provide thermal interface-free heating and local temperature measurements. A number of papers have been published to report this technology and its applications [6][7][8]. However, it remains a challenge to achieve accurate temperature measurements, while the PRT is used as an attached thin-film thermometer on the silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

Development of a platinum resistance thermometer on the silicon substrate for phase change studies

Cai¹,

Chen²,

Tsai³

et al. 2012

J. Micromech. Microeng.

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Resistance temperature detectors are commonly used measurement sensors in heat transfer studies. In many resistance temperature detectors, the platinum resistance thermometer (PRT) is chemically stable, has a wide temperature measurement range and possesses high measurement accuracy. In phase change studies of carbon nanotubes, bi-porous structures for microelectronic thermal management, 100 nm thick PRTs are developed on silicon substrates with 10 nm titanium adhesive to achieve precise and interface-free temperature measurements. After an annealing at 375 • C, the PRT samples are calibrated at a temperature range from 20 to 180 • C. Measurement hysteresis of temperature appears in thermal cycles. Electrical resistance tends to become low during all heating periods, which establishes the maximum measurement deviation of 10 • C. Experimental results from two different thin-film PRTs indicate that accurate and repeatable temperature measurements can be achieved by either reducing heating speed or using data in the cooling period.

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Section: Introductionmentioning

confidence: 99%

Development of a platinum resistance thermometer on the silicon substrate for phase change studies

Cai¹,

Chen²,

Tsai³

et al. 2012

J. Micromech. Microeng.

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“…Some research on Pt thin films on low thermal expansion substrates has been reported in the literature. Bolker and Sidles [8] studied thin-film Pt resistance thermometers on 7059 glass 3 which has a low expansion coefficient of 4.5 × 10 −6 • C −1 (0-300 • C). They did not determine the uncertainty of their measurements and were interested primarily in substrate temperature changes during sputtering.…”

Section: Introductionmentioning

confidence: 99%

Thin-film resistance thermometers on silicon wafers

Kreider¹,

Ripple

Kimes

2009

Meas. Sci. Technol.

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We have fabricated Pt thin-film resistors directly sputtered on silicon substrates to evaluate their use as resistance thermal detectors (RTDs). This technique was chosen to achieve more accurate temperature measurements of large silicon wafers during semiconductor processing. High purity (0.999968 mass fraction) platinum was sputter deposited on silicon test coupons using titanium and zirconium bond coats. These test coupons were annealed and four-point resistance specimens were prepared for thermal evaluation. Their response was compared with calibrated platinum-palladium thermocouples in a tube furnace. We evaluated the effects of furnace atmosphere, thinfilm thickness, bond coats, annealing temperature, and peak thermal excursion of the Pt thin films. Secondary ion mass spectrometry (SIMS) was performed to evaluate the effect of impurities on the thermal resistance coefficient, α. We present typical resistance versus temperature curves, hysteresis plots versus temperature and an analysis of the causes of uncertainties in the measurement of seven test coupons. We conclude that sputtered thin-film platinum resistors on silicon wafers can yield temperature measurements with uncertainties of less than 1 °C, k=1 up to 600 °C. This is comparable or better than commercially available techniques.

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“…Instead of a wound wire or coil, some about 1 µm thick conductors that form the Pt measurement resistance of such a TF sensor are produced by sputtering and structuring photolithographically of a highly purified platinum layer on a ceramic substrate. In addition, covering and passivation layers protect these thin platinum layers from pollutants even at high temperatures [1,2]. The advantages of TF sensors lie in the small dimensions, mechanical ruggedness, and a considerably more reasonable price clearly due to automated mass production.…”

Section: Introductionmentioning

confidence: 99%

Typical R(T 90) Characteristics of Platinum Thin-Film Resistance Thermometers in the Temperature Range from −50 °C to +660 °C

Boguhn

Koepke

2011

Int J Thermophys

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Today most of the available platinum thin-film (TF) resistance thermometers tend to exceed the IEC 60751 Class A tolerances for temperatures above about 400 • C and below about −50 • C. The main reason for this behavior is their specific R(T 90 ) characteristic which systematically and reproducibly differs from the standard characteristic to IEC 60751. This could be proven in the context of an extensive comparison test. However, just recently the first types of a new generation of Pt TF sensors that no longer show this typical characteristic deviation but which adhere to the tolerance class A according to the IEC 60751 standard in the temperature range of ≤−50 • C to 660 • C have become available.

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Thin‐film platinum resistance thermometers: Fabrication and use

Cited by 12 publications

References 0 publications

Development of a platinum resistance thermometer on the silicon substrate for phase change studies

Development of a platinum resistance thermometer on the silicon substrate for phase change studies

Thin-film resistance thermometers on silicon wafers

Typical R(T 90) Characteristics of Platinum Thin-Film Resistance Thermometers in the Temperature Range from −50 °C to +660 °C

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