“…An initial study reported the formation of a biphasic mixture of a HA phase and a silicon-containing a-TCP-phase at the interface when a thin calcium phosphate colloid layer on a quartz substrate was heated at 1000 C. 114 Following this observation, the same group used this concept to produce biphasic thin film coatings (with a thickness of 0.5-1 mm) of HA and a siliconstabilized a-TCP (Si-a-TCP) by dip-coating a quartz substrate into a HA suspension, 115 followed by heating at 800-1000 C. They also produced ceramics by mixing HA powder processed from the HA suspension and Si from either TEOS or tetraprolpyl orthosilicate (TPOS), followed by sintering at 1000 C. Characterization of the coatings heated at 800, 900, and 1000 C by XRD gave phase mixtures of HA (%):Si-a-TCP (%) of 94:6, 62:38, and 33:67, respectively. An initial study reported the formation of a biphasic mixture of a HA phase and a silicon-containing a-TCP-phase at the interface when a thin calcium phosphate colloid layer on a quartz substrate was heated at 1000 C. 114 Following this observation, the same group used this concept to produce biphasic thin film coatings (with a thickness of 0.5-1 mm) of HA and a siliconstabilized a-TCP (Si-a-TCP) by dip-coating a quartz substrate into a HA suspension, 115 followed by heating at 800-1000 C. They also produced ceramics by mixing HA powder processed from the HA suspension and Si from either TEOS or tetraprolpyl orthosilicate (TPOS), followed by sintering at 1000 C. Characterization of the coatings heated at 800, 900, and 1000 C by XRD gave phase mixtures of HA (%):Si-a-TCP (%) of 94:6, 62:38, and 33:67, respectively.…”