Thin-film multilayer magnetic sensors based on the anisotropic magnetoresistive effect

Kasatkin, S. I.; Murav'ev, A. M.; Vasil'eva, N. P.; Лопатин, В. В.; Popadinets, F. F.; Svatkov, A.V

doi:10.1007/bf02773248

Cited by 6 publications

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“…Recall that similar sensors, with an even or odd transfer characteristic and a Ti spacer, were studied by Kasatkin et al [14]. Changing the spacer material was aimed toward preventing the sense current from entering the lower magnetic layer.…”

Section: In-plane-conduction Magnetic-field Sensorsmentioning

confidence: 99%

“…MAGNETIC BEHAVIOR OF THE NANOSTRUCTURES It has been reported that FeNi/Ti/FeNi anisotropic structures [13] and FeNi/Al 2 O 3 /FeNi spin-tunneling structures [14] produce a magnetic-transition signal at a sufficient amplitude H m of a time-dependent applied magnetic field, the transition magnetic field H t being less than H m . As H m is increased, H t remains the same or grows insignificantly; this behavior is associated with domain walls at defects and at the specimen surface.…”

Section: Nanostructure Fabricationmentioning

confidence: 99%

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Magnetic nanostructures and nanodevices with a semiconductor or dielectric spacer

et al. 2005

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Magnetic properties of nanoscale magnetic-layer systems using FeNi, Co, FeMn, Al 2 O 3 , and SiC layers are studied experimentally. The dependence of magnetic behavior on the system geometry and parameters is addressed. Ferromagnet-semiconductor exchange coupling subject to the amplitude of an applied magnetic field is revealed. It is found that the magnetic behavior of the nanostructures varies in a nonlinear manner with applied magnetic field. Spin-tunneling magnetoresistance is observed in magnetic-layer junctions containing an Al 2 O 3 spacer. In-plane-conduction magnetic-field sensors using an Al 2 O 3 or a SiC spacer are fabricated and tested.

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Section: In-plane-conduction Magnetic-field Sensorsmentioning

confidence: 99%

Section: Nanostructure Fabricationmentioning

confidence: 99%