Thin film lithium niobate on silicon

Rabson, Thomas A.; Baumann, R.; Rost, Timothy A.

doi:10.1080/00150199008008232

Cited by 15 publications

(3 citation statements)

References 14 publications

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“…However, it has been reported earlier that oxide films deposited at RT, generally, show an amorphous nature and crystalline structure when set at a higher temperature. [15][16][17][18] Properties of oxides depend on the growth and postannealing processes. 18 To study the effect of annealing, films deposited at RT were annealed at different temperatures.…”

Section: Characterizationmentioning

confidence: 99%

Capacitance–voltage characteristics of NaNbO3 thin films

Lingwal

Panwar

2003

Journal of Applied Physics

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By radio-frequency magnetron sputtering of bulk NaNbO3 pellet targets, films of NaNbO3 have been deposited on silicon substrates at different temperatures. Room-temperature deposited films have been annealed at different temperatures. Film samples have been characterized using an x-ray diffraction method. The room-temperature deposited films show a crystalline structure with different orientations, and films deposited at 225 and 270 °C show a crystalline structure with a single-face orientation. Films deposited at 300 °C and higher temperatures show an amorphous nature. Annealing up to 500 °C changes the orientation of the room-temperature deposited films, and annealing at and beyond 600 °C results in amorphous films. Capacitance–voltage measurements have been carried out in a metal–insulator–semiconductor configuration by sandwiching a NaNbO3 film between aluminum and silicon. Structural and capacitance–voltage characteristics of the films have been found to be sensitive to sodium and oxygen stoichiometry. Hysteresis in the capacitance–voltage measurements indicates hole injection in the annealed films and electron injection in the films deposited at different temperatures. From the observed characteristics, the capacitance of the accumulation region, capacitance of inversion region, flat-band capacitance, flat-band voltage, amount of hysteresis, density of states, density of interface states, dielectric constant, maximum capacitance of depletion layer, and maximum depletion width have been calculated for the prepared samples. In the crystalline films, with increasing deposition or annealing temperature, the dielectric constant tends to that of the bulk. The charge storage capacity, charge storage density, density of states, and density of interface states for NaNbO3-assisted metal–insulator–semiconductor structure have been found to be quite larger as compared to reported values for other materials, which suggests the superior potential of NaNbO3 films for memory applications.

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Section: Characterizationmentioning

confidence: 99%

Capacitance–voltage characteristics of NaNbO3 thin films

Lingwal

Panwar

2003

Journal of Applied Physics

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“…The RT deposited films exhibited crystalline structure with different orientations. However, it has been reported earlier that oxide films deposited at RT, generally, show amorphous nature and crystalline structure is set at higher temperatures [12][13][14][15].…”

Section: X-ray Diffraction Patternsmentioning

confidence: 99%

Optical properties of sodium niobate thin films

Lingwal¹,

Kandari²,

Panwar³

2016

Nanosystems: Phys. Chem. Math.

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NaNbO 3 thin films were deposited under different conditions by rf magnetron sputtering of ceramic target. Spectral transmission of the deposited films was measured in the UV-Visible-near IR range. Films deposited at 300• C showed more absorption, and films annealed at 300• C showed less absorption than those deposited at room temperature (RT), which was found to be consistent with their X-ray diffraction (XRD) patterns. From the observed transmission spectra, refractive index, optical band gap, absorption coefficient, extinction coefficient and film thickness were calculated for the deposited films. Refractive index at 550 nm wavelength was found to be 2.11, 2.01 and 2.34 for the films deposited at RT, 300• C and annealed at 300• C, respectively. The refractive index was found to be almost constant with respect to frequency for the films annealed at 300• C. Optical band gap was found 3.82, 3.7 and 3.81 eV for the films deposited at RT, 300• C, and annealed at 300• C, respectively. Film thickness was shown to decrease with annealing. Absorption and extinction coefficients decreased with increasing wavelength, in all the samples. Band gaps associated with different interactions have been calculated for the deposited films. Phonon assisted indirect forbidden transition was most favorable in the deposited films.

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“…The partial substitution of vanadium ions by molybdenum or chromium in H 2 V 12 .xMxO 31 .y.nH2O, leads to the strong decrease in electronic conductivity and the exponential dependence of the total conductivity on relative humidity (Aldebert et al, 1981;Bondarenka et al, 2004). Various deposition techniques such as epitaxial growth by melting, chemical vapor deposition, liquid phase epitaxy, sputtering and sol gel have been used for this compound [6][7][8][9][10][11][12]. If cost effective is of prime concern, sol-gel method is the preferred thin film fabrication technique for many applications.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Structural and Electrical Properties of K- Intercalated Molybdenum Vanadium Oxide Nano-Crystalline Films Prepared by Sol-Gel Method

2014

Egyptian Journal of Solids

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A sol-gel method (colloidal route) based on V 2 O 5 •nH 2 O hydro-gel was developed to synthesize xK 2 O-(80-x)V 2 O 5-20MoO 3 .nH 2 O (0 ≤ x ≤ 20 mol.%) material. X-ray diffraction (XRD), Transimition electron microscopy (TEM), density, thermoelectric power, and Electrical properties of the as prepared films were investigated. X-ray diffraction, transmission electron micrograph and electron diffraction were used to identify the structure of the obtained nanocrystals. Homogenous nanocrystals of 10.2 nm in size were obtained and were closed packed and are distributed evenly. The density of the samples decreases with increasing K-content. Electrical conductivity and thermoelectric power were measured in the temperature range 300-500 K for the as prepared films. The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content. The carrier density was evaluated as well. The obtained results showed by increasing K content in the system under investigation, gradual changes in thermoelectric power from n-type to p-type detected. The sol-gel method is fit for the preparation of xK 2 O-(80-x)V 2 O 5-20MoO 3 .nH 2 O material which may offer some favorable properties for commercial application.

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Thin film lithium niobate on silicon

Cited by 15 publications

References 14 publications

Capacitance–voltage characteristics of NaNbO3 thin films

Capacitance–voltage characteristics of NaNbO3 thin films

Optical properties of sodium niobate thin films

Synthesis, Structural and Electrical Properties of K- Intercalated Molybdenum Vanadium Oxide Nano-Crystalline Films Prepared by Sol-Gel Method

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