Thin film interdiffusion of Au and Ga at room temperature

Šimić, Vladimir; Marinković, Ž.

doi:10.1016/0040-6090(76)90164-4

Cited by 34 publications

(14 citation statements)

References 2 publications

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“…The proposed mechanism is based on the fact that the relatively mobile A element in nanolaminated carbides, compared to the M element, can be attracted to out-diffuse from the structure in presence of another high affinity element/compound. In our case, a high chemical affinity between Ga and Au is supported by experimental observations on room-temperature interdiffusion at Au/Ga interfaces, 25,26 on Au gettering by elemental Ga in semiconductors, 27 and on fast dissolution of Ga from GaAs into Au contact without melting. 28,29 On the whole, the reaction of Ga layers in the nanolaminated carbides is likely initiated by attracting Ga atoms into the Au capping layer.…”

Section: Resultssupporting

confidence: 72%

Phase formation of nanolaminated Mo₂AuC and Mo₂(Au_1−xGa_x)₂C by a substitutional reaction within Au-capped Mo₂GaC and Mo₂Ga₂C thin films

Lai

Fashandi

et al. 2017

Nanoscale

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Au-containing nanolaminated carbides MoAuC and Mo(AuGa)C were synthesized by a thermally induced substitutional reaction in MoGaC and MoGaC, respectively. The Au substitution of the Ga layers in the structures was observed using cross-sectional high-resolution scanning transmission electron microscopy. Expansion of c lattice parameters was also observed in the Au-containing phases compared to the original phases. Energy dispersive spectroscopy detected residual Ga in Au-substituted layers of both phases with a peculiar Ga in-plane ordering for Au : Ga = 9 : 1 ratio along the Au-Ga layers in Mo(AuGa)C. These results indicate a generalization of the Au substitution reaction for the A elements in MAX phases.

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Section: Resultssupporting

confidence: 72%

Phase formation of nanolaminated Mo₂AuC and Mo₂(Au_1−xGa_x)₂C by a substitutional reaction within Au-capped Mo₂GaC and Mo₂Ga₂C thin films

Lai

Fashandi

et al. 2017

Nanoscale

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“…Of course, generally, any alloy film is expected to consist of a mixture of two separate phases in equilibrium with one another. These results are also consistent with results of Simc and Marinkovic, who investigated interdiffusion between films of gold and gallium deposited on glass (19).…”

Section: Values Of Various Electrical Parameters Presented Insupporting

confidence: 95%

Electrical Properties, Structure, and Phase Morphology of Au‐Ga Alloy Films Codeposited on GaAs Substrates

Leung

Yoshiie

Bauer

et al. 1985

J. Electrochem. Soc.

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or it may be attributed to a contribution of dissociative adsorption of N2 ~ ions IN2 + + e ~ 2N(17)] to the deposition of nitrogen atoms, notably at low frequencies. The influence of total pressure on the Si/N ratio (Fig. 4) can be explained by a reduction in ion energy with increasing total pressure (as discussed before). This leads to higher Si/N ratios at the lower ion energies (higher pressures).According to Fig. 7, the Si/N ratio of the deposited layers determines, in a first approximation, the way in which hydrogen is bonded. At high Si/N ratios (St-rich layers), almost all the hydrogen is bonded to silicon. At Si/N ratios below 0.75, most of the hydrogen is bonded to nitrogen. ConclusionsThe composition and density of plasma silicon-nitride layers can be adjusted within certain "limits by variation of the deposition temperature, total pressure, gasphase composition, and RF frequency. A simplified model is proposed for the deposition kinetics of plasma siliconnitride. It is concluded that the deposition rate is determined by the insertion of silicon and nitrogen containing compounds into Si-H and N-H bonds at the surface of the growing layer. The deposition rate is almost independent of total pressure and deposition temperature. After insertion of the formed radicals into Si-H or N-H bonds, hydrogen elimination takes place by cross-linking. It is concluded that the hydrogen-elimination step can be influenced by temperature and by ion bombardment.Layers deposited at high temperatures (>550~ or at high frequencies (>4 MHz) show a tensile stress behavior. This is explained by a hydrogen desorption rate which is smaller than the rate-limiting step for deposition. After deposition of silicon and nitrogen containing radicals, hydrogen desorption continues for a while, leading to a layer which shrinks at the deposition temperature and consequently to a tensile stress behavior. Layers deposited at low temperatures (<550~ at low frequencies (<4 MHz) show a compressive stress. Due to ion bombardment, atoms are implanted and bonds are broken, leading to a disturbed short-range orcler of the Si-N structure and to an expansion of the plasma nltride layer.ABSTRACT Electrical properties, structure, and phase morphology of gold-gallium alloy films codeposited on {100} substrates of gallium arsenide have been investigated by measurement of Schottky barrier height ~b and breakdown voltage Vb as a function of film composition and annealing conditions and comparison with corresponding structure and phase morphology, as determined by x-ray diffraction and transmission electron microscopy. Both 4~ and Vb decrease with increasing composition of gallium in the codeposited films and with increasing severity of annealing conditions. These decreases are attributed to formation of gold-gallium phases, either directly through codeposition of alloy films or through annealing of pure gold films on substrates of gallium arsenide, and localized current or field concentrations due to nonplanar phase morphologies. General behavior of electr...

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“…l ( d ) ] , whereas the gold color is maintained after the small interracial microstructural change which occurs prior to arsenic evolution [ Fig. The origin of the silver color is not clear, although it might be due to the color of the Au-Ga compound(s) (16). The origin of the silver color is not clear, although it might be due to the color of the Au-Ga compound(s) (16).…”

Section: Discussionmentioning

confidence: 99%

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

Leung

Wong

Chung

et al. 1983

J. Electrochem. Soc.

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The physiochemical effects of heating gold thin films on GaAs, namely, the arsenic evolution, gold-to-silver color transition, and microstructural changes, were investigated by in situ mass spectrometric evolved gas analysis and scanning electron microscopy. The gold-to-silver color transition was found to occur after a small amount of arsenic evolution. The transition temperature increased with increasing air pressure and gold film thickness. The relative quantities of arsenic species evolved followed the order As4 > Ase> As > As3. We observed a new microstructure consisting of interconnected irregularly shaped protrusions which appeared after a small amount of arsenic evolution and changed to the previously reported microstructure of aligned rectangular protrusions near the completion of the arsenic evolution. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 192.236.36.29ABSTRACT An integration technique is described which allows the rapid calculation of the correction factor introduced by Schumann and Gardner for spreading resistance calculations. The time required to calculate one point is typically 0.03 sec on a VAX-11/780 minicomputer, the accuracy being better than 0.1%. The technique can be easily implemented for using a resistivity-dependent contact radius. Model spreading resistance data are used to illustrate the efficiency of the integration technique.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 192.236.36.29 Downloaded on 2015-04-10 to IP

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Thin film interdiffusion of Au and Ga at room temperature

Cited by 34 publications

References 2 publications

Phase formation of nanolaminated Mo₂AuC and Mo₂(Au_1−xGa_x)₂C by a substitutional reaction within Au-capped Mo₂GaC and Mo₂Ga₂C thin films

Phase formation of nanolaminated Mo₂AuC and Mo₂(Au_1−xGa_x)₂C by a substitutional reaction within Au-capped Mo₂GaC and Mo₂Ga₂C thin films

Electrical Properties, Structure, and Phase Morphology of Au‐Ga Alloy Films Codeposited on GaAs Substrates

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

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Thin film interdiffusion of Au and Ga at room temperature

Cited by 34 publications

References 2 publications

Phase formation of nanolaminated Mo2AuC and Mo2(Au1−xGax)2C by a substitutional reaction within Au-capped Mo2GaC and Mo2Ga2C thin films

Phase formation of nanolaminated Mo2AuC and Mo2(Au1−xGax)2C by a substitutional reaction within Au-capped Mo2GaC and Mo2Ga2C thin films

Electrical Properties, Structure, and Phase Morphology of Au‐Ga Alloy Films Codeposited on GaAs Substrates

Physiochemical Effects of Heating Gold Thin Films on Gallium Arsenide

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Phase formation of nanolaminated Mo₂AuC and Mo₂(Au_1−xGa_x)₂C by a substitutional reaction within Au-capped Mo₂GaC and Mo₂Ga₂C thin films

Phase formation of nanolaminated Mo₂AuC and Mo₂(Au_1−xGa_x)₂C by a substitutional reaction within Au-capped Mo₂GaC and Mo₂Ga₂C thin films