Thin Film Growth and Ion-Beam Modification: Md Simulations Going Beyond Simple Systems

Haddeman, Edwin F. C.; Bunnik, Bouke S.; Thijsse, Barend J.

doi:10.1557/proc-585-103

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additional evidence for this is found in results from molecular-dynamics simulation of Cu growth on Mo͑110͒. 22,23 Now we return to discussing the individual spectra in Fig. 3.…”

Section: B Effect Of Film Thicknessmentioning

confidence: 71%

Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

Venugopal

Seijbel

Thijsse

2005

Journal of Applied Physics

View full text Add to dashboard Cite

Thermal helium desorption spectrometry ͑THDS͒ has been used for the investigation of defects and thermal stability of thin Cu films ͑5 -200 Å͒ deposited on a polycrystalline Mo substrate in ultrahigh vacuum. These films are metastable at room temperature. On heating, the films transform into islands, giving rise to a relatively broad peak in the helium desorption spectra. The temperature of this island formation is dependent on film thickness, being 417 K for 10 Å and 1100 K for a 200 Å film. The activation energy for island formation was found to be 0.3± 0.1 eV for 75 Å film. Grain boundaries have a strong effect on island formation. The defect concentration in the as-deposited films is ϳ5 ϫ 10 −4 , for films thicker than 50 Å and more for thinner films. Helium release from monovacancies was identified in the case of a 200 Å film. Helium release was also seen during sublimation of the Cu film ͑ϳ1350 K͒. Overlayer experiments were used to identify helium trapped close to the film surface. An increase of the substrate temperature during deposition resulted in a film that had already formed islands. Argon-ion assistance ͑250 eV͒ during film deposition with an ion/atom ratio of ϳ0.1 resulted in a significant enhancement of helium trapping in the films. The argon concentration in the films was found to be 10 −3 . The temperature of island formation was increased due to argon-ion assistance. The helium and argon desorption spectra are found to be similar, which is due to most of the helium becoming trapped in the defects created by the argon beam. The role of the Mo surface in affecting the defects at the film-substrate interface is investigated. The effect of variation of helium fluence and helium implantation energy is also considered. The present THDS results of Cu/poly-Mo are compared to those of Cu/ Mo͑100͒ and Cu/ Mo͑100͒ reported earlier.

show abstract

“…Additional evidence for this is found in results from molecular-dynamics simulation of Cu growth on Mo͑110͒. 22,23 Now we return to discussing the individual spectra in Fig. 3.…”

Section: B Effect Of Film Thicknessmentioning

confidence: 71%

Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

Venugopal

Seijbel

Thijsse

2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Haddeman et al reported an activation energy of 10.6 kJ/mole for Ion Beam Assisted Deposition (IBAD)-Mo film as a barrier layer using the Arrhenius plot. 28 Our prior studies show that the copper-silicide formation temperature of Cu-W films is higher than the Cu-Mo film. 24 Moreover, the activation energy for copper-silicide formation is slightly higher than the Cu-Mo film.…”

Section: Thermal Analysismentioning

confidence: 95%

Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study

Lin

Chu

Mahalingam

et al. 2003

Journal of Elec Materi

View full text Add to dashboard Cite

The thermal annealing behavior of Cu films containing insoluble 2.0 at.% Mo magnetron co-sputtered on Si substrates is discussed in the present study. The Cu-Mo films were vacuum annealed at temperatures ranging from 200°C to 800°C. X-ray diffraction (XRD) and scanning electron microscopy (SEM) observations have shown that Cu 4 Si was formed at 530°C, whereas pure Cu film exhibited Cu 4 Si growth at 400°C. Twins are observed in focused ion beam (FIB) images of as-deposited and 400°C annealed, pure Cu film, and these twins result from the intrinsically low stacking-fault energy. Twins appearing in pure Cu film may offer an extra diffusion channel during annealing for copper silicide formation. In Cu-Mo films, the shallow diffusion profiles for Cu into Si were observed through secondary ion mass spectroscopy (SIMS) analysis. Higher activation energy obtained through differential scanning calorimetry (DSC) analysis for the formation of copper silicide further confirms the beneficial effect of Mo on the thermal stability of Cu film.

show abstract

Ion Beam Deposition and Cleaning

Rauschenbach

2022

Low-Energy Ion Irradiation of Materials

View full text Add to dashboard Cite

Thin Film Growth and Ion-Beam Modification: Md Simulations Going Beyond Simple Systems

Cited by 3 publications

References 9 publications

Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study

Ion Beam Deposition and Cleaning

Contact Info

Product

Resources

About