Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection

Abstract

Thin-film GaSb diodes were fabricated and investigated for room-temperature radiation detection. GaSb PN junction-based detectors were fabricated by use of both ion-implantation and epitaxial methods, and were compared for crystal quality and detector performance. The implanted junctions were obtained by p-type Be ion-implantation in n-type GaSb substrates whereas the epitaxial junctions were grown by solid-source molecular beam epitaxy. Alpha-particle and fission-fragment peaks were observed in spectra from 241 Am and 252 Cf. A highly uniform response was obtained from epitaxially grown GaSb junctions whereas large pulse-height response variation was observed for the implanted diodes. The devices were fabricated in the form of metalized squares with dimensions varying from 2 9 2 mm 2 to 500 9 500 lm 2 . Reducing the size reduced detection efficiency but also increased the pulse height response and thus the signal-to-noise ratio, consistent with diode capacitance and output voltage pulse relationships. Cross-sectional transmission electron microscope imaging revealed very high-quality material for the epitaxial structure and implantation-induced damage for the implanted material.

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

“…However, the use of ion implantation introduces undesirable damage to the lattice crystal structure due to the high annealing temperature [ 54 , 55 , 56 ]. The formation of junctions appears to be more difficult than diffused junctions [ 57 , 58 ]. This causes a non-uniform p-n junction formation due to different thicknesses of the active region.…”

INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

“…Recientemente y aún con muy poco reporte en la literatura, matrices semiconductoras como anfitrionas de elementos metálicos han sido exploradas para aplicaciones en dispositivosópticos [1], electro-ópticos [2,3] y celdas solares [4,5]. Específicamente el compuesto binario GaSb se encuentra entre los semiconductores III-V como material relevante para la disposición de aleaciones o sistemas ternarios con elementos de transición [6,7]; este interés, se suscita alrededor de la obtención de sistemas con bajo valor de la banda de energía prohibida o "band gap" y/o la evidencia de propiedades magnéticas para aplicaciones en espintrónica [8].…”