Thin-film electroluminescence device utilizing ZnS:Mn nanocrystals as emission layer

Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured thin-film EL device

“…DE g and the PL efficiency tend to increase with a decrease in d ZnS (>5 nm). Similar phenomena were observed in the nanostructured ZnS:Mn/Si 3 N 4 multilayer, which has been concluded to originate from the quantum confinement effect [3,4]. On the other hand, a large drop of the PL efficiency was observed from the ZnS:Mn/AlN multilayer with d ZnS of 2 nm.…”

“…In the case of the NS-TFEL device, the ZnS NCs are formed in the multilayered ZnS/insulating interlayer structure, and the crystal size of the ZnS NCs can be controlled by the ZnS single-layer thickness. Besides, increased PL intensities as well as the bandgap widening have been observed with the decreasing the ZnS mono-layer thickness, indicating appearance of the size effects [3,4]. On the other hand, when the insulating materials for the interlayer were changed, EL properties varied.…”

“…Particularly, ZnS:Mn NCs have been gathering attentions for the basic research and application field, since ZnS has been widely used as a phosphor material for a cathode-ray tube (CRT) and a thin-film electroluminescent (TFEL) device [2]. We have been developing nanostructured (NS)-TFEL devices utilizing activator-ion-doped ZnS NCs [3][4][5]. The operation voltages of the NS-TFEL are remarkably lower than those of the conventional double insulating layer type TFEL device by 100 V 0-p , and full-color emission has been achieved.…”

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

“…Recent studies [201][202][203][204][205][206], including a theoretical study [207], made claims of enhancement that seem to support the original claim of enhanced PL [222]. For instance, a study on the PL and EL properties of ZnS:Mn nanoparticles has found that the PL efficiency increased with decreasing particle size [229]. However, most of the reported PL or EL quantum yields have not been quantitatively compared between nanoparticles and bulk.…”

Structural and optical properties of Mn doped ZnS semiconductor nanostructures

“…Among II-VI compounds, ZnS is a promising host material due to its thermal and environmental stability. Incorporation of both transition-metal ions and rare-earth ions in ZnS nanostructures by adopting chemical and physical techniques have been reported in recent years [6][7][8]. It has been used as base material for cathode ray tube luminescent materials [9,10].…”