Thin film diamond photodiode for ultraviolet light detection

Abstract

A photodiode has been constructed from lightly boron doped, Si supported, thin film chemically vapor deposited (CVD) diamond which shows over five orders of magnitude discrimination between deep UV (≤220 nm) and visible light. A thin (10 nm) gold Schottky barrier with an associated Ti–Ag–Au ohmic contact was used to create a rectifying device with low (≤2 pA) dark currents when reversed biased. This structure showed a sharp cut off in photoresponse at 220 nm, the band gap energy of diamond. Conversely, a photoconductive device fabricated from similar (nominally undoped) material gave a broader UV photoresponse and displayed high dark currents; the superior performance of the diode structure on fine grain material is discussed.

Development of Thermally Stable, Solar-Blind Deep-Ultraviolet Diamond Photosensor

“…This can be overcome simply by controlling the applied bias. In contrast to the previous photodiode, 6) ours can be operated at much lower voltages. However, a drawback of the WC Schottky photodiode is the appearance of persistent photoconductivity, which was also reported on polycrystalline diamond.…”

Struktury na bazie ZnO do detekcji światła ultrafioletowego

“…Najczęściej wykorzystywanymi materiałami w detektorach UV są krzem (Si), węglik krzemu (SiC) [7][8][9][10], diament [11][12][13] i azotki pierwiastków III grupy [14][15][16][17]. Krzem wykorzystywany jest głównie ze względu na dobrze opanowaną technologię [18], natomiast pozostałe materiały wykorzystywane są ze względu na szerokie przerwy wzbronione, dzięki którym zyskują naturalną "niewrażliwość" na światło widzialne -są naturalnymi detektorami "visible-blind" [1][2][3][4][5].…”

A novel and stable ultraviolet and infrared intensity sensor in impedance/capacitance modes fabricated from degraded CH3NH3PbI3-xClx perovskite materials

“…This could prove useful for the development of the technology of solar cell fabrication on the base of selected organic semiconductor blend. The inorganic semiconductors-based UV/IR sensors are preferred due to their quick response and stability; however, the organic semiconductors-based UV and IR sensors are favored as they are cheap, their deposition techniques are easy, and they possess low cast fabrication and flexibility [11] , [12] , [13] . Hence, the researchers are trying to fabricate devices with hybrid organic-inorganic materials.…”