Thin film deposition of lanthanum manganite perovskite by the ALE process

Nilsen, Ola; Peussa, Marko; Fjellvåg, Helmer; Niinistö, Lauri; Kjekshus, Arne

doi:10.1039/a902957e

Cited by 40 publications

(16 citation statements)

References 30 publications

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“…25 We are hereby able to deposit films with a composition close to LaMnO 3 with a La(thd) 3 : Mn(thd) 3 pulse ratio of 1 : 1 at much lower temperatures than previously reported. 24 At the same time, there are presently no problems with depletion of manganese upon introduction of lanthanum as reported in ref. 24.…”

Section: Resultsmentioning

confidence: 72%

“…24 At the same time, there are presently no problems with depletion of manganese upon introduction of lanthanum as reported in ref. 24.…”

Section: Resultsmentioning

confidence: 72%

“…The present study was unable to confirm the growth of crystalline films on Si(100) and soda-lime glass substrates as reported in. 24 This is believed to be caused by the lower deposition temperature used in the present study. The previously used deposition temperature of 400 uC 24 is outside the ALD regime for the present equipment.…”

Section: Discussionmentioning

confidence: 83%

“…In ref. 24 we demonstrated ALD growth of LaMnO 3 using a slightly different setup. In order to grow the chemically more complex La 12x Ca x MnO 3 films with ALD one needs first to explore how the deposition of each constituent affects the deposition of the others.…”

Section: Resultsmentioning

confidence: 99%

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Growth of La_1−xCaxMnO₃thin films by atomic layer deposition

et al. 2007

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Thin films of calcium substituted lanthanum manganite (La 12x Ca x MnO 3 ) have been synthesised by the ALD (atomic layer deposition) technique using Mn(thd) 3 (Hthd = 2,2,6,, La(thd) 3 , Ca(thd) 2 , and ozone as precursors. The effect of each of these precursors on the product stoichiometry has been investigated, and ALD type growth was achieved in the temperature range 200-330 uC. A concept on precursor surface area coverage has been applied in order to describe the difference between pulsed and obtained cation stoichiometry. The La 12x Ca x MnO 3 films are low in carbonate impurities although Ca(thd) 2 and ozone alone as precursors would give CaCO 3 . Mn(thd) 3 can be used as a precursor for ALD growth of these oxides for temperatures up to 330 uC when codeposited along with Ca and La, whereas 240 uC is the upper usable temperature for Mn(thd) 3 when Mn is deposited alone. Films have been deposited on substrates of (amorphous) soda-lime glass and single crystals of Si(100), MgO(100), SrTiO 3 (100), and LaAlO 3 (100). Growth with a cube-on-cube epitaxy has been achieved for SrTiO 3 (100) and LaAlO 3 (100) substrates. Magnetoresistive properties are recorded for films with a composition close to La 0.

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Section: Resultsmentioning

confidence: 72%

“…24 At the same time, there are presently no problems with depletion of manganese upon introduction of lanthanum as reported in ref. 24.…”

Section: Resultsmentioning

confidence: 72%

Section: Discussionmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

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Growth of La_1−xCaxMnO₃thin films by atomic layer deposition

et al. 2007

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“…ALD of the LaMnO 3 was first reported by Nilsen et al in 1999, using β‐diketonates and ozone . This was in the early years of complex oxide ALD, and little work was done to control crystallization or to measure functional properties of the resulting films.…”

Section: The Current Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

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properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

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