We have studied the chemical and material aspects of molecular precursor-derived
materials taking the example of the spinel MgAl2O4. Three Mg−Al alkoxides, [MgAl2(OPri)8],
[MgAl2(OBut)8] and [MgAl2(OBut)4H4] were used as single molecular precursors in the gas-phase synthesis of the MgAl2O4 films. A comparative evaluation of the growth rates,
morphology, microstructure, average particle size, consistency of elemental ratio, and carbon
contamination in the films shows that material properties of the CVD deposits are a function
of the chemical design of the precursor molecule. The intrinsic precursor properties (physical
state, vapor pressure, decomposition temperature, etc.) can be tuned by a judicious choice
of ligand(s) or their combination. For instance, [MgAl2(OPri)8] based on isopropoxide ligands
displays a potential to oligomerize upon aging due to the presence of an unsaturated metal
center (Mg) in the precursor framework. Nevertheless, the liquid state of [MgAl2(OPri)8]
provides adequate vapor pressure for growing high-quality spinel films. In contrast, the
bulkier tert-butoxide groups in [MgAl2(OBut)8] make it thermally and structurally more
stable, however causing a lower vapor pressure and higher decomposition temperature.
[MgAl2(OBut)4H4] exhibits substantially high vapor pressure but the films obtained contain
small amounts of residual organics, although the combination of hydride and tert-butoxide
ligands in [MgAl2(OBut)4H4] induces a designed ligand elimination, based on the β-hydride
elimination. Despite the fact that microstructured MgAl2O4 films with sufficient crystallinity
and a columnar microstructure could be obtained by tuning the growth parameters of the
three Mg−Al compounds, this study underscores the importance of precursor chemistry in
designing an efficient CVD process.