Thin film CdxZn1−xS/Si hybrid photovoltaic system

Phase evolution and PEC performance of ZnxCd(1−x)S nanocrystalline thin films deposited by CBD

“…Superlattice of ZnS/CdS on Au(1 1 1), deposited by ECALE, has been used for PEC cell application by Torimoto et al [17]. Thin films of Zn x Cd (1−x) S have been utilized as a window material in photovoltaic cells [18].…”

Fabrication of Cd1−xZnxS films with controllable zinc doping using a vapor zinc chloride treatment

“…As n-type semiconductors with a large and variable bandgap between 2.42 and 3.54 eV, the ternary Cd 1 À x Zn x S compounds have been used as a window layer to form heterojunction solar cells with Si [1], Cu x S [2], CuInSe 2 [3], CuGaSe 2 [4], Cu(In, Ga)Se 2 (CIGS) [5] and CdTe [6]. For commercial CdS/CdTe and CdS/CIGS solar cells, CdS is the standard window layer despite its relatively low bandgap (2.42 eV) and considerable absorption in the short wavelength region (below 500 nm).…”

Electrical and photoelectric properties of electrodeposited n-Si/n-Cd1 - x ZnxS heterojunctions

“…1 and 2, the discrepancy decreases with increasing x. According to earlier reports, increasing the Zn content of Cd 1x Zn x S films increases the height of potential barriers [6] and reduces the lattice mismatch with Si [5]. This in turn may reduce the density of interfacial states involved in charge transport.…”

“…The efficiency of Si/CdS heterojunctions was reported to be 5.5-8% [1][2][3][4]. Using Cd 1 − x Zn x S instead of cadmium sulfide, one can reduce the lattice mismatch between the materials in contact (Si and Cd 1x Zn x S), minimize the energy separation between their conduction bands, and achieve efficiencies of up to 18-20% [5,6], which is well above the efficiency of conventional silicon photodiodes.…”