Thin film CdS-CdTe heterojunction diodes

Dutton, R.W.; Muller, R.S.

doi:10.1016/0038-1101(68)90055-5

Cited by 25 publications

(2 citation statements)

References 10 publications

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“…[42][43][44] Photoconvertors based on p-type CdTe single crystals in conjunction with evaporated n-type CdS films were first prepared in the mid-1960's 45,46 and achieved modest conversion efficiency by the mid-1970's. 47,48 At that time, efficiencies of cells using CdTe single crystals were ~10% and exceeded efficiencies obtained with all polycrystalline thin film CdTe/CdS cells.…”

Section: Cdtementioning

confidence: 99%

Evolution and future prospects of inorganic photovoltaics

Birkmire

2004

SPIE Proceedings

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Inorganic semiconductors are the backbone of present day photovoltaic (PV) technologies. The highest performance solar cells use III-V based materials in complex multijunction device structures and are used primarily in the space industry. The crystalline Si technologies are the mainstay of the commercial terrestrial markets and range from single crystal through large grain polycrystalline materials. Thin film PV technologies, which are approaching large scale manufacturing production levels, consist of polycrystalline CdTe, CuInSe 2 and related alloys, and amorphous silicon (a-Si) and related alloys. The paper provides an historical background on the development of these inorganic PV technologies, followed by a discussion of the present status of each technology. The future directions being pursued to improve performance will also be discussed with emphasis on synergies between the technologies.

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Section: Cdtementioning

confidence: 99%

Evolution and future prospects of inorganic photovoltaics

Birkmire

2004

SPIE Proceedings

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“…Photovoltaic technologies are expected to lead to the realization of a sustainable society based on renewable energy without environmental pollution. There are many types of solar cell developed from various materials such as crystalline silicon (c-Si), [1][2][3][4] amorphous silicon (a-Si) and related alloys, 5,6) gallium arsenide (GaAs) and related III-V alloys, [7][8][9] cadmium telluride (CdTe) and related II-VI alloys, 10,11) copper indium diselenide (CuInSe 2 ) and related chalcopyrite compounds, 12,13) and organic materials. [14][15][16][17] There are two types of organic solar cell, dye-sensitized solar cells 14,15) and organic pn junction solar cells.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of germanium thin films on crystal silicon substrates by solid phase crystallization

Isomura

Kanai

2015

Jpn. J. Appl. Phys.

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We have investigated the solid phase crystallization (SPC) of amorphous germanium (a-Ge) precursors on single crystalline silicon (c-Si) substrates as seed layers and successfully obtained the epitaxial growth of Ge. The n-type (100) Si substrate is most suitable for preferential growth following the substrate orientation, because the velocity of preferential growth is higher than those on the other substrates and preferential growth is completed before random nucleation. The impurity contamination in the a-Ge precursors probably enhances random nucleation. The epitaxial growth is disturbed by the impurity contamination at a relatively high SPC temperature in the intrinsic and p-type Si substrates with the (100) orientation and the n-type and intrinsic Si substrates with the (111) orientation, because the lower velocity of preferential growth allows random crystallization. Almost no epitaxial growth is observed on the p-type (111) Si substrates even when low-impurity a-Ge precursors are used.

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