Thin-body effects in double-gate tunnel field-effect transistors
Nguyen Dang Chien,
Bui Huu Thai,
Chun-Hsing Shih
Abstract:Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TFETs as Tb is scaled down. Differently from previous beliefs, the on-current degradation in thin-body DG-TFETs is not mainly caused by the volume effect, but rather by a newly defined TBE named lateralization effect.… Show more
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