Thin bismuth film study by means of transmission electron microscopy

Kolosov, V. Yu.; Yushkov, A. A.; Bokuniaeva, A. O.

doi:10.1063/1.5055115

Cited by 1 publication

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this study, we are interested in primary electron energies of 1, 3, and 5 keV. These energy levels encompass the range of beam voltages employed in low voltage scanning electron microscopy in the transmission mode [25,26]. We used Monte Carlo (MC) methods to investigate how the transmitted electron spectra change with film thickness for three different materials with significantly varying atomic numbers: Si, Cu, and Au.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Simulation of Free-standing Thin Films under Low Energy Electron Bombardment: Electron Inelastic Mean Free Path (IMFP) Determination Using Elastic Peak of the Transmitted Electrons

2023

JJP

View full text Add to dashboard Cite

The electron energy spectra of transmitted scattered electrons from free-standing films are simulated using a Monte Carlo computational approach. Elastic scattering is simulated using Mott cross-sections and inelastic scattering via discrete processes determined from dielectric function data. This allows one to simulate the secondary electrons as well as the loss peaks near the elastic (zero-loss) peak. The current study suggested a directed approach for determining the electron inelastic mean free path (IMFP) of materials at low primary electron energies. The IMFP of the reference material is not necessary for the suggested technique. The suggested technique uses the ratio between the transmitted elastic peak intensity and the background intensity of backscattered electrons. Free-standing films of Si, Cu, and Au were studied with thicknesses varying from 2 to 12 nm. Primary electron energies of 1, 3, and 5 keV were applied. The results appeared very good, with the percentage error range being between 5% and 25%. We also investigated the proportion of the first and second plasmon peak intensities to the elastic peak intensity. We believe that the latter could provide a directed method of measuring the IMFP of materials. Keywords: Inelastic mean free path, Monte Carlo simulation, Geant4, Free-standing film, Zero-loss peak.

show abstract

Section: Introductionmentioning

confidence: 99%

Monte Carlo Simulation of Free-standing Thin Films under Low Energy Electron Bombardment: Electron Inelastic Mean Free Path (IMFP) Determination Using Elastic Peak of the Transmitted Electrons

2023

JJP

View full text Add to dashboard Cite

show abstract

Thin bismuth film study by means of transmission electron microscopy

Cited by 1 publication

References 7 publications

Monte Carlo Simulation of Free-standing Thin Films under Low Energy Electron Bombardment: Electron Inelastic Mean Free Path (IMFP) Determination Using Elastic Peak of the Transmitted Electrons

Monte Carlo Simulation of Free-standing Thin Films under Low Energy Electron Bombardment: Electron Inelastic Mean Free Path (IMFP) Determination Using Elastic Peak of the Transmitted Electrons

Contact Info

Product

Resources

About