2003
DOI: 10.1063/1.1543873
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Thin Al, Au, Cu, Ni, Fe, and Ta films as oxidation barriers for Co in air

Abstract: We have investigated the effectiveness of Al, Au, Cu, Ni, Fe, and Ta films with thicknesses up to 4 nm for protecting a Co surface from oxidation in air at room temperature. The distinct change in the Co 2p 3/2 core-level line shape observed by x-ray photoelectron spectroscopy upon the oxidation of Co makes it a simple matter to identify the fractions of the Co that are in the metallic state and in the oxidized state. We find that the best choices for protecting Co from oxidation are Al and Ta. We found that A… Show more

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Cited by 28 publications
(14 citation statements)
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“…Both AES and the absence of oxidation of the Co on exposure to atmosphere confirm that the Co does not segregate to the surface. The RAS-MOKE spectra measured immediately after growth have remained unchanged over a period of months indicating that the sample has remained protected by the capping layer [16]. In addition, capped 2-, 3-and 4-atom wide wires show oscillatory behaviour in their coercivity, similar to that observed for uncapped wires [17].…”
Section: Resultsmentioning
confidence: 51%
“…Both AES and the absence of oxidation of the Co on exposure to atmosphere confirm that the Co does not segregate to the surface. The RAS-MOKE spectra measured immediately after growth have remained unchanged over a period of months indicating that the sample has remained protected by the capping layer [16]. In addition, capped 2-, 3-and 4-atom wide wires show oscillatory behaviour in their coercivity, similar to that observed for uncapped wires [17].…”
Section: Resultsmentioning
confidence: 51%
“…The mean cluster size deposited was n = 15, 600, 2300 and 6500atoms/cluster, all distributions showing ratios between σ/ n ≈ 0.6 − 0.16 for the smallest and largest cluster distributions used, respectively. The samples were capped by Cu films of 4nm thickness, enough to ensure oxidization protection after exposure to air [22].…”
Section: Resultsmentioning
confidence: 99%
“…26,27 Thin capping layers (Շ10 nm) were also used to allow direct XPS verification of barrier integrity and check for cap-layer/sample-surface reactions. 28 Here, we investigate the effectiveness of metal capping layers for nondestructive high-resolution XPS analyses of ceramic thin films. We use, as a model materials system, polycrystalline 200-nm-thick NaCl-crystal structure TiN layers grown on Si(001) substrates at 400 C by reactive magnetron sputter deposition in mixed N 2 /Ar atmospheres.…”
Section: Introductionmentioning
confidence: 99%