Thickness measurement of low-Z films fabricated on thick substrate using EDXRF technique

Upmanyu, Arun; Kailash,; Kapil, Ashutosh; Mehta, D.; Kumar, Sanjeev

doi:10.1016/j.vacuum.2020.109852

Cited by 6 publications

(2 citation statements)

References 16 publications

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“…A small peak at 2.9 keV results from the excitation of Ar gas present in the air. The thickness of Si coating on Au backing was determined by using X-ray attenuation method [26]. In the X-ray attenuation method, the Au backing side of target was excited with Bremsstrahlung radiations of a Ag anode X-ray tube (figure 4) to obtain the initial photon intensity (I 𝑜 ) of Au M 𝛼𝛽 X-rays.…”

Section: Energy Dispersive X-ray Fluorescence (Edxrf) Techniquementioning

confidence: 99%

Fabrication of ¹⁹⁷Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

S.R.,

Sharma,

Kumar

et al. 2024

J. Inst.

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The fabrication of stable 197Au-backed natural Si targets with a thickness ranging from ∼ 400 μg/cm2 to ∼ 1.1 mg/cm2 using an electron beam evaporation technique is discussed. In one of the attempts, a graphite sheet was used as an evaporation source, which proves to be an efficient method in terms of minimal wastage of source material. Characterizations of the fabricated targets using various technique revealed that the targets were uniform in thickness and had negligible contamination. The optimization of evaporation parameters in the present work enhances the potential for future fabrication of isotopically enriched Si targets.

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Section: Energy Dispersive X-ray Fluorescence (Edxrf) Techniquementioning

confidence: 99%

Fabrication of ¹⁹⁷Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

S.R.,

Sharma,

Kumar

et al. 2024

J. Inst.

Self Cite

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“…But spherical zinc oxide (ZnO) NPs proved much useful to achieve the VA in nematic LC even without using any surface treatment [10]. In addition, many material characteristics were studied using different techniques [11][12][13]. Moreover, wide view angle, outstanding hues and high brightness levels of coloured LC displays prepared via doping of controlled amount of dye in LC host have become the great interest of the researchers.…”

Section: Introductionmentioning

confidence: 99%

Effect of Azo Dye on Electro-Optic and Optical Band Gap Characteristics in ZnO Nanoparticles Induced Vertically Aligned Liquid Crystal Cells

Jaggi,

Kumar,

Malik

2023

J. Phys.: Conf. Ser.

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Alignment of liquid crystal (LC) molecules in vertical direction is the most promising and interesting aspect for display devices in view of scientific and technological growth. Moreover, in accordance with the photovoltaic device applications, liquid crystals (LCs) show numerous applications. In the present work, the impact of dye as dopant with appropriate amount, over the electro-optic (E-O) and band gap properties as well as phase behaviour of vertically aligned liquid crystals (VALCs) has been studied and discussed. Initially, zinc oxide (ZnO) nanoparticles (NPs) were mixed to induce the vertical alignment (VA) in confined cell. Then, to prepare the dye doped LC sample, 0.125% of azo dye as dopant was uniformly mixed in the host sample. The results showed enhanced E-O characteristics with reduction in optical band gap as calculated using UV Visible study in 0.125% dye doped cell as compared to host sample cell.

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Accuracy of a reference-free Monte Carlo approach for SEM-EDS thickness assessment of TiN coatings onto diverse substrates

Cruz

Garzón

Noreña

et al. 2022

Micron

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Thickness measurement of low-Z films fabricated on thick substrate using EDXRF technique

Cited by 6 publications

References 16 publications

Fabrication of ¹⁹⁷Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

Fabrication of ¹⁹⁷Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

Effect of Azo Dye on Electro-Optic and Optical Band Gap Characteristics in ZnO Nanoparticles Induced Vertically Aligned Liquid Crystal Cells

Accuracy of a reference-free Monte Carlo approach for SEM-EDS thickness assessment of TiN coatings onto diverse substrates

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Thickness measurement of low-Z films fabricated on thick substrate using EDXRF technique

Cited by 6 publications

References 16 publications

Fabrication of 197Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

Fabrication of 197Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

Effect of Azo Dye on Electro-Optic and Optical Band Gap Characteristics in ZnO Nanoparticles Induced Vertically Aligned Liquid Crystal Cells

Accuracy of a reference-free Monte Carlo approach for SEM-EDS thickness assessment of TiN coatings onto diverse substrates

Contact Info

Product

Resources

About

Fabrication of ¹⁹⁷Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment

Fabrication of ¹⁹⁷Au-backed Silicon target for In-beam Gamma-ray spectroscopy experiment