Two closely related bis(ketoiminato) zinc precursors, which are air stable and possess favorable properties for metal-organic (MO)CVD, are successfully employed for the growth of ZnO films on silicon and borosilicate glass substrates at temperatures between 400 and 700°C. The as-deposited films are investigated by X-ray diffraction (XRD), field emission scanning electron\ud
microscopy (FESEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), nuclear reaction analysis\ud
(NRA), as well as by UV-vis absorption spectroscopy and photoluminescence (PL) measurements. The structure, morphology,\ud
and composition of the as-grown films show a strong dependence on the substrate temperature. The formation of pure and\ud
(001)-oriented wurtzite-type stoichiometric ZnO is observed. PL measurements are performed both at room temperature and\ud
77 K, revealing a defect-free emission of ZnO films