Thickness dependent p-n switching in SnSe2/SnOx/SnSe heterojunction-based NO2 gas sensor as well as photodetector

Detrapping of the carriers from shallow states in a highly responsive, fast, broadband (UV-vis-NIR), self-powered SnSe/Si photodetector with asymmetric metal electrodes

“…This difference may arise due to several reasons, such as substrate nature (stress or strain in the device by substrate), time of exposure of the device in the atmosphere, the thickness of the film, etc. 55 Fig. 5(b) shows the relation between power density and R .…”