Thickness-Dependent Growth Behaviors of Sputtered Amorphous InGaZnO Films Depending on the Substrates and Sputtering Conditions

Optimizing the Performance of the Atomic-Layer-Deposited Zinc–Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

“…Each condition shows a progressively lower SS in the following sequence: FA, as-deposited, OT, and OFA TFT. Since SS is related to D it and the bulk trap density of the channel, D it was extracted using the conductance method . Extracted SS exhibited minimal disparity at a level of 4 × 10 11 cm –2 eV –1 across all TFTs.…”

“…N-type amorphous ZnSnO (a-ZTO) thin films were researched as one of the promising amorphous oxide semiconductor (AOS) materials over the past decades for their use as channel material in thin film transistors (TFTs). − Recently, a-ZTO film growth by atomic layer deposition (ALD) processes is actively being reported, ,,− which offers facile manufacturing of three-dimensional (3D) structures, such as three-dimensional dynamic random access memory (3D-DRAM). , Contrary to indium-containing AOS compounds, such as amorphous In–Ga–Zn–O (a-IGZO), a-ZTO contains only earth-abundant metals, offering an affordable alternative with reasonable electron carrier mobility (∼10 cm 2 /(V s)) while retaining the amorphous structure. , The Sn 4+ ion of an a-ZTO material has the same electron configuration as the In 3+ ion ([Kr]4d 10 5s 0 ) of an a-IGZO material; the Sn 4+ ion allows for constructing an efficient percolation conduction channel, leading to reduced effective electron mass and increases carrier mobility in TFT . Additionally, ternary ALD a-ZTO undergoes a less complex process than indium-containing quaternary a-IGZO.…”