Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Cai, Hongjie; Qian, Kun; An, Yi; Lin, Guoxing; Wu, Songsong; Ding, Haokun; Huang, Wei; Chen, Songyan; Wang, Jianyuan; Li, Cheng

doi:10.1016/j.jallcom.2022.164068

Cited by 12 publications

(8 citation statements)

References 41 publications

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“…From the XRD-2DRSM result (not shown here, see supplementary data S1), the Sn content and the degree of strain relaxation in the Ge 1−x Sn x layer are estimated to be 8.5% and 2.7%, respectively. According to some previous reports, thermal treatment to Ge 1−x Sn x causes the strain relaxation first, and then the Sn segregation occurs [30,31]. We predicted that our result is also the case with the previous reports.…”

Section: Formation Of Ge 1−x Snx/siyge 1−x−y Snx Double-qws At Low Gr...supporting

confidence: 90%

Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy

Zhang¹,

Shibayama²,

Nakatsuka³

2022

Semicond. Sci. Technol.

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In this study, we investigated the impact of the growth temperatures of molecular beam epitaxy method for the Si y Ge1−x−y Sn x barrier with a Si content over 20% of Ge1−x Sn x /SiyGe1−x−y Sn x single-quantum well (QW) on their crystalline and photoluminescence (PL) properties. As a result, we found that lowering T SiGeSn down to 100 °C achieves the superior crystallinity and the higher PL efficiency at room temperature. It was owing to the suppression of the Sn segregation according to the surface morphology observation. Based on this finding, we realized the epitaxial growth of Ge1−x Sn x /SiyGe1−x−y Sn x double-QWs at 100 °C. We verified the superior crystallinity with the abrupt interface by X-ray diffraction and scanning transmission electron microscopy. In this study, we discussed the optical transition mechanism of the single- and double-QWs based on the band alignment simulation. Finally, we found that the double-QW grown at 100 °C can sustain its crystalline structure against annealing at the N2 atmosphere up to 350 °C, and the PL performance can be also improved by the thermal treatment at around 350 °C.

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Section: Formation Of Ge 1−x Snx/siyge 1−x−y Snx Double-qws At Low Gr...supporting

confidence: 90%

Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy

Zhang¹,

Shibayama²,

Nakatsuka³

2022

Semicond. Sci. Technol.

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“…The diffraction peak of Ge VS is slightly asymmetric with a tail toward the Si peak due to interdiffusion of Si and Ge during thermal annealing at 800 • C. For the samples grown at 427, 405 and 388 • C, the GeSn diffraction peaks are located at 32.500 • , 32.471 • and 32.464 • with FWHM of 328, 79 and 94 arc sec, respectively. Although GeSn is thinner than Ge VS, the FWHM of GeSn peaks from the samples grown at 405 and 388 • C is much smaller than that of Ge VS indicating better crystal quality of GeSn films than that of the Ge VS. For the sample grown at 427 • C, a small shoulder close to the Ge peak at around 32.811 • is observed, which can be ascribed to Sn segregation [33], agreeing well with the AFM scanning result. Figure 2(B) shows the asymmetric ( 22 4) XRD reciprocal space mapping (RSM) of the sample grown at 405 • C. The vertical alignment of GeSn and Ge VS peaks indicates that the GeSn film and Ge VS have an equal in-plane lattice constant.…”

Section: Figures 1(a)-(d) Display the Surface Morphology Of Ge Vssupporting

confidence: 88%

“…After deposition of GeSn films at 427, 405 and 388 • C, the surface roughness RMS changes to 4.31, 0.93 and 1.18 nm, respectively. For GeSn films grown at 427 • C, some nano dots are observed indicating the occurrence of Sn segregation, which has been widely reported for GeSn growth [33]. For GeSn samples grown at 405 and 388 • C, the surface is flat without Sn segregated dots, which indicates that flat GeSn films without Sn segregation can be obtained by sputtering at 388 • C-405 • C under appropriate deposition conditions.…”

Section: Figures 1(a)-(d) Display the Surface Morphology Of Ge Vsmentioning

confidence: 52%

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

Lin

Qian

Ding

et al. 2023

J. Phys. D: Appl. Phys.

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In this work, strong photoluminescence (PL) from physical vapor deposited GeSn on Ge-buffered Si is harvested by pursuing high deposition temperature. High-quality Ge0.938Sn0.062 film is obtained through sputtering epitaxy at a record high temperature of 405oC. The PL peak intensity of the sputtering-grown GeSn is enhanced by 21 times compared to that of GeSn with similar Sn content grown by molecular beam epitaxy at 150oC. The PL intensity ratio between the sputtering-grown GeSn and Ge virtual substrate (VS) reaches a value of 18. Power-dependent and temperature-dependent PL characterizations demonstrate that band-to-band recombination dominates in the sputtering-grown GeSn film. The results indicate that high-temperature sputtering epitaxy, which has a merit of low cost and high-productivity potential, is promising to prepare high-quality GeSn films for optoelectronic applications.

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“…A 1D photonic crystal cavity allows confining light in the gain medium to achieve lasing. [ 16 ] The suspended pads play a key role in enabling the emission wavelength tuning via a mechanism explained in the following steps: upon a localized laser annealing in the pad area by an external laser pumping (step I), the temperature of the annealed area rises beyond the critical temperature ( T c ) that induces the Sn segregation to the surface of the GeSn layer [ 19 , 20 , 21 ] (step II). The Sn segregation is equivalent to a removal of large Sn atoms from the lattice of GeSn.…”

Section: Resultsmentioning

confidence: 99%

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

et al. 2023

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The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable optical and quantum photonic circuits. Herein, a scalable technique is presented to produce identical on-chip lasers by dynamically controlled strain engineering. By using localized laser annealing that can control the strain in the laser gain medium, the emission wavelengths of several GeSn one-dimensional photonic crystal nanobeam lasers are precisely matched whose initial emission wavelengths are significantly varied. The method changes the GeSn crystal structure in a region far away from the gain medium by inducing Sn segregation in a dynamically controllable manner, enabling the emission wavelength tuning of more than 10 nm without degrading the laser emission properties such as intensity and linewidth. The authors believe that the work presents a new possibility to scale up the number of identical light sources for the realization of large-scale photonic-integrated circuits.

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Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Cited by 12 publications

References 41 publications

Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy

Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

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Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Cited by 12 publications

References 41 publications

Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy

Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering

Contact Info

Product

Resources

About

Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy

Crystalline and optoelectronic properties of Ge_1−xSn _x /high-Si-content-Si _y Ge_1−x−ySn _x double-quantum wells grown with low-temperature molecular beam epitaxy