Thickness dependence of the optical constants of oxidized copper thin films based on ellipsometry and transmittance

Gong, Junbo; Dong, Wei; Dai, Rucheng; Wang, Zhongping; Zhang, Zengming; Ding, Zejun

doi:10.1088/1674-1056/23/8/087802

Cited by 13 publications

(11 citation statements)

References 25 publications

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“…The ellipsometry parameters of Cu2O:N thin films deposited on quartz substrate were investigated with a resolution of 27 points in the range 1.5-4.1 eV (with step 0.1 eV). The investigated parameters were the band gap and the surface roughness [29,30] and were listed in Table 5. The FTIR spectra of all samples deposited on quartz displayed the peaks corresponding to the vibrational modes of Si-O belonging to the quartz substrate (780 cm −1 , broadband centered at 980 cm −1 with a shoulder at 1080 cm −1 ) [26,27].…”

Section: Spectroscopic Ellipsometry (Se)mentioning

confidence: 99%

“…The ellipsometry parameters of Cu 2 O:N thin films deposited on quartz substrate were investigated with a resolution of 27 points in the range 1.5-4.1 eV (with step 0.1 eV). The investigated parameters were the band gap and the surface roughness [29,30] and were listed in Table 5. By the Tauc-Lorentz oscillator methodology [31], modeling was performed to determine the band gap, surface roughness, refractive index (n), and the extinction coefficient (k) in the range 300-800 nm (from visible to near infrared) for Cu 2 O thin films deposited on quartz substrates.…”

Section: Spectroscopic Ellipsometry (Se)mentioning

confidence: 99%

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Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

et al. 2020

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This study is aimed at increasing the performance and reliability of silicon-based heterojunction solar cells with advanced methods. This is achieved by a numerical electro-optical modeling and reliability analysis for such solar cells correlated with experimental analysis of the Cu2O absorber layer. It yields the optimization of a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. Experimental research of N-doped Cu2O thin films was dedicated to two main activities: (1) fabrication of specific samples by DC magnetron sputtering and (2) detailed characterization of the analyzed samples. This last investigation was based on advanced techniques: morphological (scanning electron microscopy—SEM and atomic force microscopy—AFM), structural (X-ray diffraction—XRD), and optical (spectroscopic ellipsometry—SE and Fourier-transform infrared spectroscopy—FTIR). This approach qualified the heterojunction solar cell based on cuprous oxide with nitrogen as an attractive candidate for high-performance solar devices. A reliability analysis based on Weibull statistical distribution establishes the degradation degree and failure rate of the studied solar cells under stress and under standard conditions.

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Section: Spectroscopic Ellipsometry (Se)mentioning

confidence: 99%

“…The ellipsometry parameters of Cu 2 O:N thin films deposited on quartz substrate were investigated with a resolution of 27 points in the range 1.5-4.1 eV (with step 0.1 eV). The investigated parameters were the band gap and the surface roughness [29,30] and were listed in Table 5. By the Tauc-Lorentz oscillator methodology [31], modeling was performed to determine the band gap, surface roughness, refractive index (n), and the extinction coefficient (k) in the range 300-800 nm (from visible to near infrared) for Cu 2 O thin films deposited on quartz substrates.…”

Section: Spectroscopic Ellipsometry (Se)mentioning

confidence: 99%

Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

et al. 2020

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“…6 и 7, показывают, что пленки меди толщиной, не превышающей 5 nm, практически прозрачны для излучения на частотах 9−11 GHz. Пленки меди нанометровой толщины очень быстро окисляются на воздухе, в результате чего формируется стойкий слой окисла со сложной структурой [6,7,13]. Формирование окисного слоя происходит в несколько стадий и существенно зависит от технологического процесса магнетронного напыления.…”

Section: заключениеunclassified

“…Однако, как показывает несоответствие экспериментальных и расчетных значений оптических коэффициентов, структура проводящего слоя неоднородна. В частности, в [13] показано, что перколяционный переход происходит при толщине 10−12 nm. Пленки, толщина которых превышает указанный порог, проявляют чисто металлические свойства, в то время как проводимость пленок с меньшей толщиной определяется в большей степени морфологией пленки.…”

Section: заключениеunclassified

Оптические коэффициенты пленок меди нанометровой толщины в диапазоне 9--11 GHz

Вдовин¹,

Андреев²,

Глазунов³

et al. 2019

Журнал Технической Физики

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The reflection, transmission, and absorption coefficients of ultrathin copper films on a quartz substrate in a waveguide at frequencies of 9–11 GHz were measured. Films less than 5 nm thick are almost completely oxidized and transparent to microwave radiation. A conductive layer is formed when the film thickness exceeds 5 nm, however, the reflection coefficient increases with a thickness in the range of 5-15 nm more slowly than it follows from calculations utilized the model conductivity of a continuous film. The results can be explained by the morphology of the films.

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“…Это справедливо для линейной зависимости проводимости пленки по толщине. Между тем проводимость ультратонких металлических пленок существенно неоднородна по толщине вследствие поверхностного окисления и формирования внутренней островковой структуры [28][29][30]. В таких случаях применение метода усреднения становится некорректным.…”

Section: Introductionunclassified

Приближенные Граничные Условия Для Задачи Нахождения Оптических Коэффициентов Ультратонких Металлических Пленок В СВЧ И ТГЦ Диапазонах

Глазунов¹,

Вдовин²,

Андреев³

2020

Журнал Технической Физики

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Approximate boundary conditions for a problem of calculating the optical coefficients of a system composed of inhomogeneous ultrathin metallic film with an arbitrary thickness dependence of conductivity deposited on dielectric substrate are obtained. The derivation of the boundary conditions is based on the Picard method of successive approximations. Analytical expressions for the errors in calculating the optical coefficients with use of the proposed approximate boundary conditions are presented. It is shown that the error increases with the frequency and the film thickness increasing. The maximum error for films of 10 nm-thickness does not exceed 10.7% at 1 THz. As an example, the complex optical coefficients of a system similar to Fabry-Perot etalon and a metal film without a substrate with model thickness dependence of conductivity are calculated. The coincidence between the results of numerical simulation and calculations performed with approximate boundary conditions is shown. The possibility of direct calculating the average conductivity of a film from experimentally measured reflection and transmission coefficients is demonstrated.

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Thickness dependence of the optical constants of oxidized copper thin films based on ellipsometry and transmittance

Abstract: Gong Jun-Bo(宫俊波) a) , Dong Wei-Le(董伟乐) a) , Dai Ru-Cheng(代如成) b) , Wang Zhong-Ping(王中平) b) , Zhang Zeng-Ming(张增明) b) † , and Ding Ze-Jun(丁泽军) a) a)

Cited by 13 publications

References 25 publications

Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

Оптические коэффициенты пленок меди нанометровой толщины в диапазоне 9--11 GHz

Приближенные Граничные Условия Для Задачи Нахождения Оптических Коэффициентов Ультратонких Металлических Пленок В СВЧ И ТГЦ Диапазонах

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